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TT Electronics plc D2013UK.03 RF MOSFET 20W 1GHZ DK PKG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	D2013UK.03	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TT Electronics Power and Hybrid / Semelab Limited D2013UK RF POWER TRANSISTOR
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Richardson RFPD	D2013UK				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

D2013UK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
D2013UK		Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz PUSH-PULL		Original	PDF
D2013UK		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

D2013UK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sWG 24 copper wire Abstract: 27 swg enamelled copper wire 49 swg enamelled copper wire k 1413 FET a7x transistor D2013UK Text: TetraFET D2013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2013UK 1000MHz 24swg B62152-A7x sWG 24 copper wire 27 swg enamelled copper wire 49 swg enamelled copper wire k 1413 FET a7x transistor D2013UK	PDF
a7x transistor Abstract: sWG 24 copper wire swg copper wire 27 swg enamelled copper wire copper wire s.w.g 22 A7X k D2013UK Text: TetraFET D2013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2013UK 1000MHz 24swg B62152-A7x a7x transistor sWG 24 copper wire swg copper wire 27 swg enamelled copper wire copper wire s.w.g 22 A7X k D2013UK	PDF
D2013UK Abstract: No abstract text available Text: TetraFET D2013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2013UK D2013UK	PDF
Untitled Abstract: No abstract text available Text: TetraFET D2013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2013UK 1000MHz 24swg B62152-A7x	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
GNS430 Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon	Original	GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK	PDF
Untitled Abstract: No abstract text available Text: IMI TetraFET SEM E D2013UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz PUSH-PULL r4! FEATURES ~ t— fr i, H J ^ j i F» _ I M w N • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	D2013UK	PDF
Untitled Abstract: No abstract text available Text: nil Vrrr= TetraFET mi D2013UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W-28V-1GHZ PUSH-PULL I 3 2 p i s . rs • I'b l! JU— 4 ir — G (4 p is ) 4 FEATURES u • SIMPLIFIED AMPLIFIER DESIGN	OCR Scan	D2013UK 0W-28V-1GHZ	PDF
Untitled Abstract: No abstract text available Text: bDE T> • 6133107 OOOCHVG Û T1 ■ SMLB T *3\ -Z 5 SENELAB PLC SEMELAB D2013UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RFFET 20W -28V -1G H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2 DRAIN1	OCR Scan	D2013UK	PDF
BFM12 Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db	OCR Scan	BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK	PDF
D2219 Abstract: D2003UK Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en	OCR Scan	OT223 D2219 D2003UK	PDF