Untitled
Abstract: No abstract text available
Text: TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 175MHz SINGLE ENDED C D 2 p ls E B ! A G $ # " H I FEATURES SIMPLIFIED AMPLIFIER DESIGN F M J K N SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
16swg
18swg
|
PDF
|
D1004UK
Abstract: No abstract text available
Text: TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
100nF
D1004K
1-70pF
D1004UK
|
PDF
|
18SWG
Abstract: k 6257 k
Text: TetraFET D1004UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
16swg
18swg
k 6257 k
|
PDF
|
D1004UK
Abstract: No abstract text available
Text: TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
D1004UK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D1004UK Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)70.0 V(BR)GSS (V)20.0 I(D) Max. (A)20.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC)-65
|
Original
|
D1004UK
|
PDF
|
D1004UK
Abstract: No abstract text available
Text: TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D 2 p ls E B ! A G $ # H " I FEATURES F M J K N DT • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
16swg
18swg
D1004UK
|
PDF
|
D1004UK
Abstract: 18SWG k 6257 k
Text: TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
D1004UK
175MHz
16swg
18swg
D1004UK
k 6257 k
|
PDF
|
transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
|
Original
|
CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
|
PDF
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
PDF
|
GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
|
Original
|
GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IUI TetraFET =K = D1004UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA £ 2 p is i* B 1 A ^ E 2 3 4. . . .- A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W - 28V -175M Hz SINGLE ENDED - G ▼ S 4 FEATURES t ▼ A A F M • SIMPLIFIED AMPLIFIER DESIGN
|
OCR Scan
|
1004U
-175M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bDE D • 0133187 OOODRlb Ö4S ■ S H L B SEMELAB PLC 'T'31'25 SEM ELAB D1004UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W -28V -175M H z SINGLE ENDED MECHANICAL DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN
|
OCR Scan
|
D1004UK
-175M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: nil Vrrr= TetraFET mi D1004UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED D 2 pis 1 T 1 II 2 II 3 * iZ 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
|
OCR Scan
|
D1004UK
|
PDF
|
BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db
|
OCR Scan
|
BFM12
BFM21
BFM22
BFM23
BFM32
BFM33
BFM34
BFM35
D1001UK
D1002UK
BFM33
BFM34
BFM-12
BFM32
D1022UK
D1053UK
D1015UK
|
PDF
|
