D 2060 TRANSISTOR Search Results

D 2060 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

D 2060 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION	OCR Scan	671-BO01	PDF
2n555 Abstract: No abstract text available Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(\|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3	OCR Scan	2N155 2N176 2N235A 2N236A MT-36 2N236B 2N242 2N255 2N256 2N268 2n555	PDF
LS 74151 Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155 Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363	OCR Scan	MT-36 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 LS 74151 2N555 MT27 220 hfk Germanium Power Devices MT-27 2N2553 2N297A	PDF
2n3215 Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556 Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 \|~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581	OCR Scan	2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2n3215 TO13 MT28 diode e 2060 2n2284 2N1044 2N1045 2N2556	PDF
2N3214 Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044 Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~\|efli\|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883	OCR Scan	afl4fl352 DDD0111 TMI\I515T0R Tc-25Â 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 2N3214 TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1044	PDF
2N2067 Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042 Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 \|~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581	OCR Scan	2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2N2067 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A	PDF
2N158A Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044 Text: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670	OCR Scan	2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 2N158A germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1044	PDF
2N206 Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043 Text: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669	OCR Scan	2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 2N206 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067	PDF
germanium transistors NPN Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A	OCR Scan	2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557	PDF
2N3215 Abstract: MT28 TO13 2n3214 Germanium power Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r	OCR Scan	3TM7375 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N3215 MT28 TO13 2n3214 Germanium power	PDF
Untitled Abstract: No abstract text available Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)	OCR Scan	O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890	PDF
2N3440A Abstract: No abstract text available Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5	OCR Scan	O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A	PDF
2N3439A Abstract: 2N1890 2N3418A 2N3419A 1016npn 2N1717A npn 505 142 transistor Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 V ceo PACKAGE NPN TO-39 /¡ I NPN TO-5 Tjr i$f Ic DEVICE TYPE sus VOLTS (m ax ) 1*FE@ V CE (m in /m ax AMPS @ A/V) 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A VcE(s»t) @ (V @ A/A)	OCR Scan	O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3439A 2N3418A 2N3419A 1016npn npn 505 142 transistor	PDF
transistor c 2060 Abstract: d 2060 transistor 2060 transistor 2n2223 BSCECC 2N2060 Text: SEMICONDUCTOR NETWORKS S TAN D AR D PROD UCTS - SILICON PLANAR D UAL TRANSISTORS A range of dual transistors for differential amplifiers and other applications requiring matched transistors with a high degree of parameter uniformity, encapsulated in multilead TO-5.	OCR Scan	ZDT41 ZDT42 ZDT45 transistor c 2060 d 2060 transistor 2060 transistor 2n2223 BSCECC 2N2060	PDF

Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339	OCR Scan	O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420	PDF
2N2060 Abstract: 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR DUAL TRANSISTORS A range o f dual transistors fo r differential amplifiers and other applications requiring matched transistors w ith a high degree o f parameter uniform ity, encapsulated in multilead TO-5.	OCR Scan	2N2060 ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 60T45 2N2223 2N2223A	PDF
TO61 package Abstract: 2N1724A 2N5540 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 VcEO Ic ^FE@ IC/ ^CE fr MHz l@2/.2 50 10 30-90@2/15 ,6@2/.2 50 10 5 50-150@2/15 l@2/.2 50 10 50 10 20-60@5/5 .5 @5/. 5 40 15 2N2812 50 10 40-120@5/5 ,5 @ 5/.5 40 15 2N2813 70 10 20-60@5/5 , 5 @ 5/.5	OCR Scan	2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 TO61 package 2N5540	PDF
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716	PDF
2N5302 EB Abstract: 2N1463 2n4271 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3	OCR Scan	SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271	PDF
transistor 2N43 Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^FE@ VcE<sat) IC/ ^ C E pr D WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2	OCR Scan	2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 transistor 2N43	PDF
Untitled Abstract: No abstract text available Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2	OCR Scan	2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS--24062	PDF
2n3054 Abstract: 40349 Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2	OCR Scan	2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS-2022Î 2n3054 40349	PDF
STA6047 Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861 Text: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO\|SUS\|	OCR Scan	STAE046 STA6047 STA6048 2N2564 2N2565 2N2566 2N2567 2N2659 2N2660 2N2661 2N1038 2n1039 LS 74151 2n2665 germanium transistors NPN STA6048 STA9860 STA9861	PDF
2N3406 Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7 Text: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169	OCR Scan	2N3036 10/10m 2N3053 2N3053L 2N305A 2N3055 20rain 2N3055/5 2N3055/6 2N3055/7 2N3406 2N3055 plastic pic 08m 2N3055-6 2N3444 2N3680 2N3172 2N3055-7	PDF

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D 2060 TRANSISTOR Search Results

D 2060 TRANSISTOR Result Highlights (5)

D 2060 TRANSISTOR Datasheets Context Search

Untitled

2n555

LS 74151

2n3215

2N3214

2N2067

2N158A

2N206

germanium transistors NPN

2N3215

Untitled

2N3440A

2N3439A

transistor c 2060

Untitled

2N2060

TO61 package

2N4839

2N5302 EB

transistor 2N43

Untitled

2n3054

STA6047

2N3406