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New Jersey Semiconductor Products, Inc. 2N3036
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N3036		1,288		2	1 - 10 $3.145 100 $2.2581 1000 $1.9837 10000 $1.9837	Buy Now
New Jersey Semiconductor Products, Inc. 2N3036A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N3036A		350		2	1 - 10 $3.145 100 $2.2581 1000 $1.9837 10000 $1.9837	Buy Now
New Jersey Semiconductor Products Inc 2N3036 TRANSISTOR,BJT,NPN,80V V(BR)CEO,1.2A I(C),TO-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N3036		1,030			1 $6.48 10 $6.48 100 $6.48 1000 $2.592 10000 $2.592	Buy Now
New Jersey Semiconductor Products Inc 2N3036A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N3036A		280			1 $6.48 10 $6.48 100 $3.024 1000 $2.808 10000 $2.808	Buy Now
GTCAP 2N3036 TRANSISTOR,BJT,NPN,80V V(BR)CEO,1.2A I(C),TO-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N3036		43			1 $4.5 10 $3.3 100 $3 1000 $3 10000 $3	Buy Now

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2N3036 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3036	Central Semiconductor	NPN SILICON TRANSISTOR	Original	PDF
2N3036	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1.2 / Hfe=40min / fT(Hz)=50M / Pwr(W)=0.8	Original	PDF
2N3036	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N3036	Central Semiconductor	NPN METAL CAN - SWITCHING AND GENERAL PURPOSE	Scan	PDF
2N3036	Central Semiconductor	BJT, NPN, Silicon Epitaxial Transistor, IC 1.2A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1.2 / Hfe=40min / fT(Hz)=50M / Pwr(W)=0.8	Scan	PDF
2N3036	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2N3036	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3036	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3036	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3036	Unknown	GE Transistor Specifications	Scan	PDF
2N3036	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3036	Unknown	Transistor Replacements	Scan	PDF
2N3036	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N3036	Unknown	Transistor Replacements	Scan	PDF

2N3036	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3036	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3036	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N3036	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N3036	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N3036	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF

2N3036 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3036 Abstract: No abstract text available Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N3036 O205AD) 10/10m 17-Jul-02 2N3036	PDF
Untitled Abstract: No abstract text available Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N3036 O205AD) 10/10m 19-Jun-02	PDF
2N3036 Abstract: No abstract text available Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N3036 O205AD) 10/10m 1-Aug-02 2N3036	PDF
2N3036 Abstract: No abstract text available Text: 2N3036 Si NPN Lo-Pwr BJT 16.24 Transistors Transistors Bipolar Si N. 1 of 2 Home Part Number: 2N3036 Online Store 2N3036 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N3036 com/2n3036 2N3036	PDF
2N1674 Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664 Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31	Original	MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664	PDF
Untitled Abstract: No abstract text available Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	2N3036	PDF
3SM diode Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306 Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31	Original	MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 3SM diode 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306	PDF
2N1893 motorola Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39 Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31	Original	MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1893 motorola BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39	PDF
2N3036 Abstract: LG 631 IC Text: Datasheet 2N3036 ~ - - • NPN SILICON TRANSISTOR Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3036 is a Silicon NPN Epitaxial Planar Transistors mounted in a	OCR Scan	2N3036 20MHz 150mA, LG 631 IC	PDF
2n3036 Abstract: No abstract text available Text: TYPE 2N3036 N-P-N SILICON TRANSISTOR B U L L E T IN NO . D L -S 734232, A U G U S T 1 9 6 3 - R E V IS E D M ARC H 1973 FOR G E N E R A L PURPOSE, M E D IU M -P O W E R A M P L IF IE R A N D SW IT C H IN G A P P L IC A T IO N S • High Power Dissipation Capability: 1 0 w a t T c = 25°C	OCR Scan	2N3036	PDF
2N3406 Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7 Text: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169	OCR Scan	2N3036 10/10m 2N3053 2N3053L 2N305A 2N3055 20rain 2N3055/5 2N3055/6 2N3055/7 2N3406 2N3055 plastic pic 08m 2N3055-6 2N3444 2N3680 2N3172 2N3055-7	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE max	OCR Scan	bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B	PDF
2N3568 Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224 Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545	OCR Scan	2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224	PDF

2n3298 Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613 Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max	OCR Scan	2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888	PDF
Untitled Abstract: No abstract text available Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8	OCR Scan	2N3008 2N3012 2N3014 2N3019 2N3020 80min 30min 5/30m 4/30m 2N3036	PDF
2N3055E specification Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349	OCR Scan	ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package	PDF
N3020 Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F \| n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220	OCR Scan	2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053	PDF
2N4033 Abstract: 2N2905 2N3702 Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120	OCR Scan	2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702	PDF
2N2195 Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699 Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE \|t,3b72SS 0037=173 S \| D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:	OCR Scan	-CDI0DES/0PT03- 3b72SS 2N656 2N699 2N718 2N720 2N735 2N736 2N739 2N740 2N2195 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2n2102 motorola 2N2297 motorola 2N3019	PDF
2N295 Abstract: 2N2891 2N223 Text: central se hi co nd u ct or bi D F \| n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221	OCR Scan	2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 2N2237 2N2243 2N295 2N2891 2N223	PDF
transistor t05 Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697 Text: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200	OCR Scan	TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 N3830 transistor t05 TIS60m 2N1889 2N1890 2N1893	PDF
2N2222n Abstract: 2n3053A complementary 2N2017 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2897 2N2193A Text: TYPE NO. P O LA R ITY Medium Power Amplifiers and Switches CASE H MAXIMUM RATINGS Pd mW •c V CEO (A) (V) 1000 800 1000 1000 1 0.5 1 11 FE V CE(SAT) max 'c VC E (V) (V) 'c Cob COM PLE max M ENTARY (MHz) (pF) T YPE fT mki min max ImAI 60 50 65 65 50 100	OCR Scan	2N2017 2N2102 2N4036 2N2102A 2N2192 2N2192A 2N2192B 2N2193 2N2193A 2N2907 2N2222n 2n3053A complementary 2N2897	PDF
2SA532 Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G	OCR Scan	057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357	PDF

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2N3036 Price and Stock

New Jersey Semiconductor Products, Inc. 2N3036

New Jersey Semiconductor Products, Inc. 2N3036A

New Jersey Semiconductor Products Inc 2N3036

New Jersey Semiconductor Products Inc 2N3036A

GTCAP 2N3036

2N3036 Datasheets (29)

2N3036 Datasheets Context Search

2N3036

Untitled

2N3036

2N3036

2N1674

Untitled

3SM diode

2N1893 motorola

2N3036

2n3036

2N3406

IC HXJ 2038

Untitled

2N3568

2n3298

Untitled

2N3055E specification

N3020

2N4033

2N2195

2N295

transistor t05

2N2222n

2SA532