Untitled
Abstract: No abstract text available
Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ
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GSI550
Junc-Case700m
delay100nÃ
time200nÃ
time900nÃ
StyleTO-218
Code5-71
NumberTR00500071
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SDD216
Abstract: SDD216DK SDD216TT
Text: SDD216 77mm Fast Recovery DIODE 2500V / 2900Arms The SDD216 fast recovery diode is designed for use in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with low thermal resistance offer a new advantage for optimizing other circuit components. It is manufactured by the
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SDD216
2900Arms
SDD216
case70oC
2900ximum
00A/us
125oC
SDD216DK
SDD216TT
SDD216DK
SDD216TT
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SDD67HK
Abstract: B1187 4500v DIODE 5035
Text: SDD67HK ast Reco y DIODE Fast Recov ry 40mm F ver 300A / 4500V The SDD67HK fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in
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SDD67HK
SDD67HK
125oC
B1187
4500v
DIODE 5035
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: SDD67HK y DIODE ver ast Reco 40mm F ry Recov Fast 300A / 4500V The SDD67HK fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in
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SDD67HK
SDD67HK
125oC
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A881A
Abstract: 4500v snubber 1250
Text: A881A 77mm Fast Recovery DIODE 4500V / 1250Arms The A881A fast recovery diode is designed as a parallel mate for 1250 Arms GTO's used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with low thermal resistance offer a new advantage for optimizing other circuit
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A881A
1250Arms
A881A
125oC
case70oC
00A/us
4500v
snubber 1250
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A881B
Abstract: 4500v
Text: A881B 77mm Fast Recovery DIODE 4500V / 1950Arms The A881B fast recovery diode is designed as parallel mate for 3000A IT Q M GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge
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A881B
1950Arms
A881B
125oC
case70oC
00A/us
11\a881b
4500v
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A796
Abstract: No abstract text available
Text: A796 53mm Fast Recovery DIODE 1500 - 2500V The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with
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00A/us
A796
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Untitled
Abstract: No abstract text available
Text: MOTOROLA MC44802A SEMICONDUCTOR TECHNICAL DATA PLL Tuning Circuit with 1.3 GHz Prescaler The MC44802A is a tuning circuit fo r TV applications. It contains, on one chip, all the functions required fo r PLL control of a VCO. This integrated circuit also contains a high frequency prescaler which can be bypassed by
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MC44802A
MC44802A
15-Bit
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