Untitled
Abstract: No abstract text available
Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ
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GSI550
Junc-Case700m
delay100nÃ
time200nÃ
time900nÃ
StyleTO-218
Code5-71
NumberTR00500071
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Untitled
Abstract: No abstract text available
Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8
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IXGH30N60U1
Junc-Case620m
delay100nÃ
time200nÃ
time500nÃ
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Untitled
Abstract: No abstract text available
Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8
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IXGH30N60AU1
Junc-Case620m
delay100nÃ
time200nÃ
time500nÃ
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Untitled
Abstract: No abstract text available
Text: SML60G60AN Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)60.0 Absolute Max. Power Diss. (W)185 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.67 Thermal Resistance Junc-Amb.30.0 g(fe) Min. (S) Trans. admitt.
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SML60G60AN
delay75nÃ
time200nÃ
time600nÃ
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Untitled
Abstract: No abstract text available
Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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IXGH30N30
Junc-Case620m
delay100nÃ
time200nÃ
time700nÃ
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Untitled
Abstract: No abstract text available
Text: IRGAC30U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb.30 g(fe) Min. (S) Trans. admitt.3.1
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IRGAC30U
delay48nÃ
time30nÃ
time200nÃ
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Untitled
Abstract: No abstract text available
Text: IRGP430UD2 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)20 I(C) Max. (A)25# Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case1.2 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.2.3
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IRGP430UD2
delay77nÃ
time75nÃ
time200nÃ
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