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    C3225X7R2A225KT Price and Stock

    TDK Corporation C3225X7R2A225K230AM

    Multilayer Ceramic Capacitors MLCC - SMD/SMT OPEN 1210 100V 2.2uF X7R 10% T: 2.3mm
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    Mouser Electronics C3225X7R2A225K230AM 88,852
    • 1 $0.77
    • 10 $0.473
    • 100 $0.313
    • 1000 $0.229
    • 10000 $0.184
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    TTI C3225X7R2A225K230AM Reel 3,000 1,000
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    TDK Corporation C3225X7R2A225K230AB

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 100V 2.2uF X7R 10% T: 2.3mm
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    Mouser Electronics C3225X7R2A225K230AB 81,067
    • 1 $0.65
    • 10 $0.41
    • 100 $0.311
    • 1000 $0.199
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    TTI C3225X7R2A225K230AB Reel 184,000 1,000
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    TDK Corporation C3225X7R2A225KT0L0U

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    Bristol Electronics C3225X7R2A225KT0L0U 907
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    ComSIT USA C3225X7R2A225KT0L0U 16,000
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    Win Source Electronics C3225X7R2A225KT0L0U 52,000
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    TDK Corporation C3225X7R2A225KT

    CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 2.2 UF, SURFACE MOUNT, 1210
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    Quest Components C3225X7R2A225KT 204
    • 1 $4
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    • 100 $2
    • 1000 $1.85
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    Avnet Abacus C3225X7R2A225KT Reel 143 Weeks 1,000
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    Vyrian C3225X7R2A225KT 1,606
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    TDK Corporation C3225X7R2A225K230AE

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 1210 100V 2.2uF X7R 10% T:2.3mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI C3225X7R2A225K230AE Reel 2,000 1,000
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    • 1000 $0.299
    • 10000 $0.293
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    Find more C3225X7R2A225KT price and stock on Findchips.com

    C3225X7R2A225KT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: C3225X7R2A225K230AB TDK Item Description : C3225X7R2A225KT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C3225 [EIA CC1210] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100 120


    Original     		C3225X7R2A225K230AB C3225X7R2A225KT* C3225 CC1210] 100Vdc) AEC-Q200 227Mohm 100kHz 500kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC28510 75V/4A Hyper Speed Control Synchronous DC/DC Buck Regulator SuperSwitcher II™ General Description Features The Micrel MIC28510 is an adjustable-frequency, synchronous buck regulator featuring unique adaptive ontime control architecture. The MIC28510 operates over an


    Original     		MIC28510 MIC28510 M9999-120611-A PDF

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


    Original     		PDF

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g PDF

    C3225X7R2A225KT5LOU

    Abstract: No abstract text available
    Text: user Guide | UG:014 VI Chip VTM® Evaluation Board Written by: Ankur Patel Applications Engineer August 2013 Contents Page Introduction Introduction 1 This evaluation board offers a convenient means to evaluate the performance of Vicor’s VTM® current multiplier. All evaluation boards include sockets for easy "plug


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 PDF

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		AFT20P140--4WN AFT20P140-4WNR3 PDF

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 PDF

    AVX C1608X7R2A102K

    Abstract: CRCW080510K0JNEA C3225X7R2A225KT5 CRCW060349R9FKEA 24VIN Ceramic Capacitor 47uf 100V 1210 x7r GRM32ER61C476ME15 MIC28510 MCC SMD DIODE c1608x7r2a472k
    Text: MIC28510 Evaluation Board 75V/4A Hyper Speed Control Synchronous DC/DC Buck Regulator General Description Getting Started The MIC28510 DC/DC regulator operates over an input supply range of 4.5V to 75V and provides a regulated output at up to 4A of output current. The


    Original     		MIC28510 250kHz 100kHz 500kHz) M9999-030712 AVX C1608X7R2A102K CRCW080510K0JNEA C3225X7R2A225KT5 CRCW060349R9FKEA 24VIN Ceramic Capacitor 47uf 100V 1210 x7r GRM32ER61C476ME15 MCC SMD DIODE c1608x7r2a472k PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 PDF

    c2012 TDK

    Abstract: C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor
    Text: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS


    Original     		C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] c2012 TDK C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor PDF

    LDMOS DVB-T transistors

    Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 LDMOS DVB-T transistors 470-860 CRCW120610RJ RF high POWER TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 PDF

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT PDF

    transistor j307

    Abstract: j352 sk063
    Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to


    Original     		AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063 PDF

    AVQ100

    Abstract: No abstract text available
    Text: 48Vdc Input,12Vdc@8.3A Output Quarter-Brick Converter AGQ100-48S12B Description The AGQ100-48S12B is a single output DC-DC converter with standard quarter-brick outline and pin configuration. It delivers up to 8.3A output current with 12.0V output voltage.


    Original     		48Vdc 12Vdc AGQ100-48S12B AGQ100-48S12B SJ/T11363-2006 AVQ100 PDF

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n PDF

    MRF8P20140WHS

    Abstract: mrf8p20140 J473 MRF8P20140W
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 PDF

    transistor t 2180

    Abstract: No abstract text available
    Text: MIC28500 75V/4A Hyper Speed Control Synchronous DC-DC Buck Regulator SuperSwitcher II™ General Description Features The Micrel MIC28500 is an adjustable frequency, synchronous buck regulator featuring a unique adaptive ontime control architecture. The MIC28500 operates over an


    Original     		MIC28500 MIC28500 M9999-060311-B transistor t 2180 PDF

    j377

    Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 j377 MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA j382 ATC800B HSR3 PDF

    IrL 1540 N

    Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H PDF