EFC060B
Abstract: No abstract text available
Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC060B
12GHz
18GHz
EFC060B
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2N5459
Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Text: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15
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OT-223
JFTJ105
KSK211
KSK595
MMBF5484
MMBF5485
P1086
2N5460
2N5461
2N5462
2N5459
2N5485 mpf102
KSK161
mpf102 equivalent
J107 diode
J113 equivalent
J201 N-channel JFET
transistor j210
2N5485
MMBFJ177
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EFC240B
Abstract: No abstract text available
Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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2n5248
Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640
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2N5555
2N5638
2N5639
2N5640
PN4360
PN5033
2n5248
PF5101
2N5248 equivalent
2N5247
PN4857
PN4858
U1897
2N5245
PF5301-2
2N5460
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K596 b 01
Abstract: K596
Text: K596 K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES Power dissipation PCM: 2. GATE 0.1 W Tamb=25℃ 3. DRAIN Gate Current I G: 10 mA Drain current 1 mA I D: Drain-Source voltage -20 V BVGDO: Operating and storage junction temperature range 123
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O-92S
K596 b 01
K596
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EFC240B
Abstract: No abstract text available
Text: Excelics EFC240B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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EFC060B
Abstract: SG95
Text: EFC060B Low Distortion GaAs Power FET FEATURES 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC060B
12GHz
EFC060B
SG95
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EFC120B
Abstract: D48350
Text: EFC120B Low Distortion GaAs Power FET 550 FEATURES 50 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC120B
12GHz
EFC120B
D48350
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EFC120B
Abstract: No abstract text available
Text: Excelics EFC120B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC120B
12GHz
18GHz
EFC120B
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Untitled
Abstract: No abstract text available
Text: JFET Glossary of Symbols JFET Glossary of Symbols DC PARAMETERS BV DGO V or BVGDO BV SGO(V) or BVGSO BV GSS(V) or BV or V(BR)GSS IDGO(pA) or IGDO ID(mA) or ID(ON) ID(OFF)(pA) IDSS(mA) Drain-Gate Breakdown Voltage with Source Open Circuit The breakdown voltage of the drain-gate
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Pt 2229
Abstract: EFC240D
Text: Excelics EFC240D PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240D
Pt 2229
EFC240D
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EFC480C
Abstract: No abstract text available
Text: Excelics EFC480C PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK
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EFC480C
---S12--Mag
---S22--Mag
EFC480C
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EFC060B-100F
Abstract: 130gm
Text: Excelics EFC060B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +25.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM”
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EFC060B-100F
100mil
12GHz
EFC060B-100F
130gm
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EPB018A5-70
Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180
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EPB018A5
3x180
320X290
EPB018A7
EPB018A9
EPB025A
EPB018A5-70
EPB018A7-70
8664
EPB025A
EPB018A7
EPB018A9
EPB018A9-70
EPB025A-70
EPB018A5
1580
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical
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TGA1171-EPU
38GHz
36dBm
40GHz
TGA1171
500mA,
TGA1171-EPU
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW
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DC-18GHz
OC-192
TGA1328-EPU
14GHz
TGA1328EPU
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems
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TGA4042-EPU
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EIA1414-2P
Abstract: EIB1414-2P
Text: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)
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EIA/EIB1414-2P
46dBm
EIA1414-2P
180mA
32dBm
175oC
150oC
45dBc
23dBm/Tone
-65/150oC
EIA1414-2P
EIB1414-2P
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Untitled
Abstract: No abstract text available
Text: DETTOSI ^¿hDhOO S9S Discrete PO W ER & Signal Technologies & National Semiconductor" N-Channel JFETs Switches / Choppers Device No. Case Style BVass *GSS BVGDO '□G O V @ I0 Min (jiA) Wf!) (nA) @ Max (V) VP (nA)@ VDS ^ G S Max (V) (V) <v)@ vDS Min Max (V) (nA)
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OCR Scan
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2N5555
2N5638
2N5639
2N5640
PN4091
PN4092
PN4093
PN4391
PN4392
PN4393
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2N5114
Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Text: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso
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OCR Scan
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2N5114
2N5115
2N5114
2N5115=
2N5115
field effect transistors
TELEDYNE CRYSTALONICS
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D113-0
Abstract: BF244A D1130
Text: This "I BVgss Igss Vp Vgs Case BVgdo •dgd ■d V @ VGS (V) Vus Style (V )0 I g (nAJBVco (nA) Uin Max (V) Min Max (V) Min (pA) Max oo “ I C|s» RetYps) ■oss (mA) @Vds (mmho) @ f (pF) ®VDS Min Max (V) Min Max (MHz) Typ (V) NF (dB)@ RG= 1k Cm Process Pkg.
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OCR Scan
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D1130
003717M
T-03-01
D113-0
BF244A
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Untitled
Abstract: No abstract text available
Text: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5
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OCR Scan
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2N5018
2N5019
2N5114
2N5115
2N5116
P1086
P1087
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2N3820 NATIONAL SEMICONDUCTOR
Abstract: No abstract text available
Text: D iscrete POW ER & Signal Technologies National Semiconductor P-Channel JFETs Switches / Choppers b v gss Device No. Case Style ’ess BVGDo nA @ VD0 (V)@ lG Max (V) Min (fiA) J174 J175 J176 TO-92 TO-92 TO-92 30 30 30 1 1 1 J177 TO-92 30 1 P1086 P1087 TO-92 30
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P1086
P1087
2N3820 NATIONAL SEMICONDUCTOR
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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OCR Scan
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