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    EFC120B Search Results

    EFC120B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EFC120B Excelics Semiconductor 10-14V low distortion GaAs power FET Original PDF
    EFC120B-100F Excelics Semiconductor 10-14V low distortion GaAs power FET Original PDF

    EFC120B Datasheets Context Search

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    EFC120B

    Abstract: D48350
    Text: EFC120B Low Distortion GaAs Power FET 550 FEATURES 50 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFC120B 12GHz EFC120B D48350

    EFC120B

    Abstract: No abstract text available
    Text: Excelics EFC120B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFC120B 12GHz 18GHz EFC120B

    EFC120B-100F

    Abstract: No abstract text available
    Text: Excelics EFC120B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +28.0dBm TYPICAL OUTPUT POWER HIGH BVgd FOR 10V BIAS 9.0dB TYPICAL POWER GAIN AT 8GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM”


    Original     		PDF EFC120B-100F 100mil 12GHz EFC120B-100F

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF