Untitled
Abstract: No abstract text available
Text: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical
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TGA1171-EPU
38GHz
36dBm
40GHz
TGA1171
500mA,
TGA1171-EPU
0007-inch
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Rogers-4003
Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS
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EB1050SOT89-AG
FPD1050SOT89
25dBm
36dBm
12dBm
FPD1050SOT89;
1050m
30mil
LL1608
Rogers-4003
CAPACITOR 33PF
rogers 4003
26GHz LNA
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FLL21E004ME
Abstract: No abstract text available
Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E004ME
36dBm
17GHz
2200MHz
FLL21E004ME
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JESD51-7
Abstract: MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041 911MHz
Text: 19-0248; Rev 1; 6/09 KIT ATION EVALU E L B AVAILA High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to
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650MHz
1000MHz
MAX2031
36dBm
1250MHz
MAX2029.
JESD51-7
MABAES0029
MAX2029
MAX2031ETP
MAX2039
MAX2041
911MHz
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Fmm5046vf
Abstract: 0503 10MHZ J250100
Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the
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FMM5046VF
36dBm
FMM5046VF
FCSI0200M200
0503 10MHZ
J250100
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Untitled
Abstract: No abstract text available
Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz
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RT233
50MHz
33dBm
36dBm
900MHz
IMT-2000
WP-22
RT233
IMT-2000,
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50 SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C
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36dBm
CLPFL-0900
10-Jan-11
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation • SAW Band Pass Filter • 50 SMA Connectors • Test Equipment • Lab Use • +36dBm 4 Watts • Operating Temperature: -40°C to 85°C • Storage Temperature: -40°C to 85°C Crystek’s new line of SAW Band Pass Filters are designed in a rugged SMA
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36dBm
CBPFS-0881
18-Aug-11
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AM343635SF-2H
Abstract: No abstract text available
Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.
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AM343635SF-2H
AM343635SF-2H
36dBm
36dBm
AM343635SF-
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Untitled
Abstract: No abstract text available
Text: AM244236WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM244236WM-BM-R is part of the GaAs MMIC power amplifier series. It has 31dB gain, 36dBm output power over the 2.4 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.
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AM244236WM-BM-R
AM244236WM-BM-R
36dBm
50-ohm
1500mA,
10mils
125mA,
275mA
1100mA
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C
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36dBm
CHPFL-1000
04-Nov-10
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C
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36dBm
CHPFL-0300
04-Nov-10
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C
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36dBm
CLPFL-0600
09-Jun-10
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MP036S
Abstract: MT8841 MT8841AE MT8841AN MT8841AS
Text: CMOS MT8841 Calling Number Identification Circuit Features • • • • • • • • • • ISSUE 4 1200 baud BELL 202 and CCITT V.23 Frequency Shift Keying FSK demodulation Compatible with Bellcore TR-NWT-000030 and SR-TSV-002476 High input sensitivity: -36dBm
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MT8841
TR-NWT-000030
SR-TSV-002476
-36dBm
General-11
MP036S
MT8841
MT8841AE
MT8841AN
MT8841AS
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FPD1050SOT89
Abstract: 20 ohm
Text: EB1050SOT89BA FPD1050SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 24.5dBm Output Power 17.5dB Gain 0.65dB Noise Figure 36dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS
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EB1050SOT89BA
FPD1050SOT89
85GHz
85GHz
36dBm
10dBm
85GHz.
FPD1050SOT89;
1050m
30mil
20 ohm
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RF2173SR
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Package Style: QFN, 16-Pin, 4x4 VCC2 NC 2F0 GND2 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT Applications 13 5 6 7 8 9 GND 14 VCC 15 APC2 16 APC1 Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at
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RF2173
16-Pin,
36dBm
800MHz
950MHz
2002/95/EC
DS130620
RF2173SR
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EIA1616-4P
Abstract: No abstract text available
Text: Excelics EIA1616-4P PRELIMINARY DATA SHEET 16.2-16.4GHz, 4W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN
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EIA1616-4P
36dBm
1760ATINGS
3120mA
360mA
35dBm
175oC
150oC
-65/175oC
EIA1616-4P
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AM08011036UM-3H
Abstract: No abstract text available
Text: AM08011036UM-3H Power Amplifier Module 8.0 – 11.0GHz, 28dB, 4W February 2014 Rev1 DESCRIPTION AMCOM’s AM08011036UM-3H is a broadband GaAs MMIC power amplifier. It has 28dB small signal gain, and 36dBm 4W saturated output power over the 8.5 to 10.5GHz band.
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AM08011036UM-3H
AM08011036UM-3H
36dBm
11GHz
36dBm
300mA.
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Untitled
Abstract: No abstract text available
Text: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm
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28dbm
DVA6735
38dbn^
36dbm
DVA6736
42dbm
DVA6737
DVA6738
D5244thru
D5259
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Untitled
Abstract: No abstract text available
Text: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM6472-4C
36dBm
FLM6472-4C
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Untitled
Abstract: No abstract text available
Text: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7785-4C
36dBm
FLM7785-4C
FLM7177-18DA
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Untitled
Abstract: No abstract text available
Text: FLM7785-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7785-4C
36dBm
FLM7785-4C
FLM7177-18DA
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Untitled
Abstract: No abstract text available
Text: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-4E
36dBm
-45dBc
25dBm
4450-4E
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FUJITSU MICROWAVE
Abstract: FLM4450-4E
Text: F, , FLM4450-4E J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: r!add = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-4E
36dBm
-45dBc
25dBm
FLM4450-4E
FUJITSU MICROWAVE
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