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    EFC240D Search Results

    EFC240D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EFC240D Excelics Semiconductor 10-14V low distortion GaAs power FET Original PDF
    EFC240D-SOT89 Excelics Semiconductor Low Distortion GaAs Power FET Original PDF

    EFC240D Datasheets Context Search

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    Pt 2229

    Abstract: EFC240D
    Text: Excelics EFC240D PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFC240D Pt 2229 EFC240D

    EFC240D-SOT89

    Abstract: 47DBM
    Text: Excelics EFC240D-SOT89 DC-4GHz PRELIMINARY DATA SHEET Low Distortion GaAs Power FET Features 177-183 65-69 65-75 15-25 SOURCE 29-31 44 DRAIN GATE SOURCE 95-100 • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE +30.5dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 2GHz


    Original     		PDF EFC240D-SOT89 47dBm PARAMETE-152 EFC240D-SOT89

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF