MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
|
2N5306
Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N5306
MPSA14
2N5306
F63TNR
PN2222N
CBVK741B019
|
rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
PDF
|
MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
|
MPS A06 transistor
Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
MPSA06RA
O-92-3
MPS A06 transistor
MPS A06
MPSA06 "cross reference"
mps 0724
marking A06 amplifier
FAIRCHILD SOT-223 MARK
Marking code mps
|
Untitled
Abstract: No abstract text available
Text: PN4355 MMBT4355 C E C BE TO-92 B SOT-23 Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
PN4355
MMBT4355
PN4355
OT-23
TN4033A
|
transistor j210
Abstract: 212 t sot-23
Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
|
Original
|
PDF
|
MMBFJ210
MMBFJ211
MMBFJ212
OT-23
transistor j210
212 t sot-23
|
25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
|
2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
|
MOSFET bs170
Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
|
Original
|
PDF
|
BS170
MMBF170
500mA
MOSFET bs170
CBVK741B019
F63TNR
MMBF170
PN2222N
BS170 AN
bs170 TO-92
BS170 application note
|
BC212L
Abstract: CBVK741B019 F63TNR PN2222N
Text: BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
|
Original
|
PDF
|
BC212L
300mA.
BC212L
CBVK741B019
F63TNR
PN2222N
|
t1 BC547
Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
Text: BC547 / BC547A / BC547B / BC547C BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
|
Original
|
PDF
|
BC547
BC547A
BC547B
BC547C
BC547
BC547A
BC547B
PN100A
t1 BC547
specifications of BC547B transistor
bc547c fairchild
transistor bc547 specifications
547B
547C
Bc547B TRANSISTOR
CBVK741B019
|
BC368
Abstract: CBVK741B019 F63TNR PN2222N
Text: BC368 BC368 B C TO-92 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
BC368
BC368
CBVK741B019
F63TNR
PN2222N
|
BCxxx TRANSISTOR
Abstract: No abstract text available
Text: PN4249 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
PN4249
PN200
BCxxx TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
|
Original
|
PDF
|
MMBFJ175
MMBFJ175
MMBFJ176
MMBFJ177
OT-23
|
|
|
Untitled
Abstract: No abstract text available
Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
PN4275
PN2369A
|
2N5486
Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching
|
Original
|
PDF
|
2N5484
MMBF5484
MMBF5484
MMBF5485
MMBF5486
2N5484
2N5485
2N5486
OT-23
2N5486
2N5485
CBVK741B019
MMBF5485
MMBF5486
|
CBVK741B019
Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
|
Original
|
PDF
|
PN5179
MMBT5179
OT-23
CBVK741B019
F63TNR
MMBT5179
MPS5179
PN2222N
PN5179
TRANSISTOR C 3223
|
2N4402
Abstract: CBVK741B019 F63TNR PN2222N
Text: 2N4402 2N4402 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units
|
Original
|
PDF
|
2N4402
2N4402
CBVK741B019
F63TNR
PN2222N
|
CBVK741B019
Abstract: F63TNR MMBT2907 PN2222N PN2907 PN2907A PNP pN2907
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
PN2907
MMBT2907
OT-23
PN2907A
CBVK741B019
F63TNR
MMBT2907
PN2222N
PN2907
PNP pN2907
|
k 3683 transistor
Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)
|
Original
|
PDF
|
2N6076
k 3683 transistor
BCxxx TRANSISTOR
PN2222N
2N6076
CBVK741B019
F63TNR
small signal transistor
transistor k 3683
transistor k 0247
|
PNP 2n4403 331
Abstract: 2N4403 CBVK741B019 F63TNR MMBT4403 PN2222N SOT-23 2N4403
Text: 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N4403
MMBT4403
2N4403
OT-23
PNP 2n4403 331
CBVK741B019
F63TNR
MMBT4403
PN2222N
SOT-23 2N4403
|
2N3905
Abstract: CBVK741B019 F63TNR PN2222N BCxxx TRANSISTOR
Text: 2N3905 2N3905 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units
|
Original
|
PDF
|
2N3905
2N3905
CBVK741B019
F63TNR
PN2222N
BCxxx TRANSISTOR
|
2N5308
Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N5308
MPSA14
2N5308
PN2222N
TO5 package
D9842
F63TNR
CBVK741B019
PN222N
D74z
transistor k 0247
|
2388 84 JRC
Abstract: jrc 2388 yx 8018 tdc1008 ADSP-1080 0620 jrc gsp3f Analog Devices Data-Acquisition Databook 1984 ADSP1080 JRC 2388 84
Text: DSP PRODUCTS DATABOOK DSP MICROPROCESSORS MICROCODED SUPPORT COMPONENTS FLOATING POINT COMPONENTS FIXED POINT COMPONENTS How to Find Product Data in This Databook T H IS V O LU M E Contains Data Sheets, Selection Guides, Application N otes, and a wealth of background inform ation on com ponents for num ber
|
OCR Scan
|
PDF
|
000-page
2388 84 JRC
jrc 2388
yx 8018
tdc1008
ADSP-1080
0620 jrc
gsp3f
Analog Devices Data-Acquisition Databook 1984
ADSP1080
JRC 2388 84
|