Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N6076 Search Results

    SF Impression Pixel

    2N6076 Price and Stock

    onsemi 2N6076

    TRANS PNP 25V 0.5A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6076 Bulk 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.04906
    		Buy Now
    Avnet Americas 2N6076 Bulk 4 Weeks 13,889
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC 2N6076

    TRANS PNP 25V 0.5A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6076 Bulk 11,539
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Central Semiconductor Corp 2N6076

    Bipolar Transistor Small Signal PNP Amplifier/Switch 25V 100mA 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N6076)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6076 Box 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Central Semiconductor Corp 2N6076 APM PBFREE

    Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N6076 APM PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6076 APM PBFREE Ammo Pack 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21868
    		Buy Now
    Mouser Electronics 2N6076 APM PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.207
    		Get Quote

    Central Semiconductor Corp 2N6076 APM TIN/LEAD

    Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N6076 APM TIN/LEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6076 APM TIN/LEAD Ammo Pack 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.25148
    		Buy Now
    Mouser Electronics 2N6076 APM TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.24
    		Get Quote
    Find more 2N6076 price and stock on Findchips.com

    2N6076 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6076 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N6076 Fairchild Semiconductor Silicon PNP Small Signal Transistor Original PDF
    2N6076 Fairchild Semiconductor Silicon PNP Small Signal Transistor Original PDF
    2N6076 Fairchild Semiconductor SILICON PNP SMALL SIGNAL TRANSISTOR Original PDF
    2N6076 Central Semiconductor PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH Scan PDF
    2N6076 Central Semiconductor PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch Scan PDF
    2N6076 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6076 General Electric Semiconductor Data Book 1971 Scan PDF
    2N6076 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N6076 General Electric PNP Silicon Transistor. 25V, 100mA. Scan PDF
    2N6076 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6076 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6076 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6076 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6076 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6076 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6076 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6076 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6076 National Semiconductor PNP General Purpose Transistors Scan PDF
    2N6076 National Semiconductor General Purpose Amplifiers and Switches Scan PDF

    2N6076 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ^zml-Conductoi Lptoducti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DISCRETE POWER & SIGNAL TECHNOLOGIES f 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO 25 V (Mln) hFE . . . . 100 (Min) @ VCE - 10 V, Ic = 10 mA


    Original     		PDF 2N6076

    k 3683 transistor

    Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 k 3683 transistor BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247

    2N6076

    Abstract: 2n60
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 2N6076 2n60

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N5172 2N6076

    hFE is transistor

    Abstract: 2N6076
    Text: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Unit VCBO Collector-Base Voltage Parameter -25 V VCEO Collector-Emitter Voltage


    Original     		PDF 2N6076 2N6076 hFE is transistor

    2N6076

    Abstract: fairchild low power transistor
    Text: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage


    Original     		PDF 2N6076 2N6076 fairchild low power transistor

    transistor 3683

    Abstract: 2N6076
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 5ppt6894 transistor 3683 2N6076

    Untitled

    Abstract: No abstract text available
    Text: 2N6076 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.500


    Original     		PDF 2N6076

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    2N6076

    Abstract: No abstract text available
    Text: FAIRCHILD D ISC R E TE POW ER & SIGNAL TECH N O LO G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV c e o hFE 25 V Min 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 3 1 B C E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature


    OCR Scan     		PDF 2N6076 ppt6894

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER & SIGNAL TECHNOLOGIES tm 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR B V ceo . . . 25 V Min hFE . . . 100 (Min) @ V c e = 10 V, I c = 10 m A l 2 B C ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature


    OCR Scan     		PDF 2N6076

    2N6076

    Abstract: No abstract text available
    Text: FAIRCHILD D IS C R E T E PO W ER & SIGNAL TEC H N O L O G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV ceo hFE . . . . 25 V Min . . . . 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 B C 31 E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEM PERATURES


    OCR Scan     		PDF 2N6076 2n6076 ppt6894

    "to-98" package

    Abstract: 2N5172
    Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 obser10V, "to-98" package 2N5172

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package

    2N4425

    Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N4121

    Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


    OCR Scan     		PDF DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138

    IC cbe

    Abstract: 2N6426 MPS3708
    Text: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)


    OCR Scan     		PDF O-92-18R to-92-18r 2n5812 2n5813 2n5816 2n5817 2n581b mps3415 mps3702 mps3704 IC cbe 2N6426 MPS3708

    BTB 600 BR

    Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
    Text: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 00035U 2N5087 TP5138 TP5139 2N5142 O-226AA/STYLE BTB 600 BR tp5372 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    transistor bI 240

    Abstract: TRANSISTOR a31
    Text: DIE No. PNP Medium Power TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V 6 V 800 mA Parameter A—31 Emitter-Base Voltage ■ DESCRIPTION V ebo Collector Current Continuous


    OCR Scan     		PDF OT323) 500mA 250MHZ transistor bI 240 TRANSISTOR a31