Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BF-A53BJRD SINCE 1981 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Direct drive common anode. 12.50 .492 8
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BF-A53BJRD
BF-A53BJRD
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RELE 12V
Abstract: HOLT INC ECG805 ECG806
Text: PHILIPS 17E E C G INC D bfa531Hfl 0QD3S4Û ECG805 H E T Y P E E C G 8 0 5 provides th e fun ctio n o f a n i-f gain block and is designed fo r use in c o m m u n ications a n d f-m receivers. T T h e device consists o f a three-stage lim itin g am p li
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ECG805
T-77-05-07
ECG805
ECG806
0V-20V
250mVrms,
RELE 12V
HOLT INC
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BUP22C
Abstract: BUP22 BUP22B
Text: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
BUP22
BUP22B
BUP22C
7Z92B9U3
7Z92S92
BUP22B;
BUP22C.
BUP22C
BUP22B
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RZB12100Y
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D • bfa53*i31 00152fl3 3 H ~ “ Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.
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FO-57C)
RZB12100Y
bk53131
001550b
RZB12100Y
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JY marking transistor
Abstract: Transistor 5331 MRB11080Y
Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates
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fafa53T31
1SD47
MRB11080Y
FO-67
JY marking transistor
Transistor 5331
MRB11080Y
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Untitled
Abstract: No abstract text available
Text: bfa5312fl QDG354fl 3 17E D PHILIPS E C G INC ECG805 T-77-05-07 l-F GAIN BLOCK WITH VOLTAGE REGULATOR semiconductors n p H E T Y P E E C G 8 0 5 provides the function of an i*f gain block and is designed for use in com* munications and f-m receivers. LOW l-F
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bfa5312fl
QDG354fl
T-77-05-07
ECG805
250mVrms.
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BDT29
Abstract: BDT29B BDT30 TIP29 c4060
Text: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.
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bfa53131
BDT29;
BDT29B;
r-33-(
BDT30
TIP29
BDT29
bS3131
00nbS7
BDT29B
c4060
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization
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2003S
2009S
LBE2003S
LBE2009S
LCE2003S
LCE2009S
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Untitled
Abstract: No abstract text available
Text: '- N AMER PHILIPS/DISCRETE 5SE D • 11 bb53=131 003271=] 5 ■ BYV143 SERIES ,[ 7 ? 0 3 -f t SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
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BYV143
T03-79
T-03-19
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T-33-73
Abstract: BUT21C BUT21B IEC134 BUT21
Text: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control
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titiS3T31
BUT21B
BUT21C
T0-220
O-220AB.
BUT211B
T-33-13
7Z94B37
T-33-73
BUT21C
IEC134
BUT21
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BUZ84
Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ84
Q0147QE
T-39-13
BIXZ84
BUZ84
t03 package transistor pin dimensions
BU184
TRANSISTOR 13-h
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ECG1373
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E bhS3Tafl 0005201 T Features • Incorporating pro tectio n circuits surge, th e rm a l p ro tectio n, etc. • A u to m a tic operating point stabilizer circuit -07Q"r ( 1*8 ) • Low d istortion, lo w l / f noise • Low shock noise fro m p o w e r O N , OFF
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ECG1373
bfa5312fl
T-74-05-0Ã
ECG1373
T-74-05-01
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ECG740A
Abstract: ECG740
Text: PHILIPS E C G 17E D INC ECG740A Audio Power Amplifier Sem iconductors A U D I O PO W ER A M P L IF IE R JL n A n } r *> INDEX PIN M O.D3 _1 _L FEATURES! • Low Distortion • Low Q uie sce n t Current • 34dB Internally Fixed G a in • H igh Input Impedance
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bb53ci2Ã
0DQ3374
ECG740A
T-74-05-01
ECG740A
ECG740
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pcf8582a
Abstract: PCF8582D 24 SIGNETICS PCF8572 PCA8582B PCF8570 PCF8571 PCF8581 PCF8582E PCF8598
Text: NAPC/ SIGNETICS bbS3ci54 00bS23? 45E D Slgnetics l2C Peripherals for Microcontrollers 1 «SIC3 Preliminary specincallon 1024 x 8-bit static C M O S EEPRO M w ith l2C -b us interface P C F8598 T -Y 6 -/3 -2 1 FEAT U RES GENERAL DESCRIPTION • Low Power CMOS
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bbS3ci54
00bS23?
PCF8598
M8A700
pcf8582a
PCF8582D
24 SIGNETICS
PCF8572
PCA8582B
PCF8570
PCF8571
PCF8581
PCF8582E
PCF8598
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bfa53
Abstract: Philips ECG 978 ECG978
Text: PHILIPS E C G INC 17E D • bbSBTSÖ G00447S ’ ECG Semiconductors ECG978 DUAL TIMING CIRCUIT 14 13 12 I I FEATURES: • • 10 9 8 f .280" 7.ll TIMING FROM MICROSECONDS THROUGH HOURS OPERATES IN BOTH ASTABLE AND M ONO STABLE MOOES • ADJUSTABLE DUTY CYCLE
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00447S
200inA
ECG978
22-SECOND
bfa53
Philips ECG 978
ECG978
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Untitled
Abstract: No abstract text available
Text: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,
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PMBF107
VCB711
003b2G5
BF107
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Untitled
Abstract: No abstract text available
Text: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast
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BUS131
BUS131H
BUS131
bb53131
T-33-13
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0q011
Abstract: DAD02 74LS364 wf034 SCN2672 sc82673 SCN2672TC5A44 scb2673 keyboard controller 8048 signetics 2673
Text: NAPC/ SI6NETICS Signetics sìe ì> • basais1* oossaia i SCN2672T Programmable Video Timing Controller PVTC Product Specification Microprocessor Products DESCRIPTION The Signetics SCN2672T Programmable Video Timing Controller (PVTC) is a programmable device designed for use
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SCN2672T
SCN2672T
0q011
DAD02
74LS364
wf034
SCN2672
sc82673
SCN2672TC5A44
scb2673
keyboard controller 8048
signetics 2673
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SCC2691AC1N24
Abstract: diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312
Text: S'îE D NAPC/ SIGNETICS Signetics bbS3T24 GDSSIST 1 .7=7Sr-37-ar SCC2691 Universal Asynchronous Receiver/Transmitter UART Product Specification Communications and Industrial Products Group c PIN CONFIGURATIONS DESCRIPTION FEATURES The Signetics SCC2691 Universal Asyn
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SCC2691
7sr-37-aT
SCC2691
24-pin
SCC2691AC1N24
diagram remote control receiver and transmitter
SCC2691AC1A28
T-75-37-05
SCC2691AA1D24
SCC2691AA1N24
SCC2691AC1D24
bts312
bbS312
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RZ3135B15W
Abstract: RZ3135B30W
Text: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich
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RZ3135B15W
RZ3135B30W
RZ3135B30W
7Z88S11
RZ3135B15W
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DIODE m1
Abstract: m3062 BYQ27
Text: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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BYQ27
T-03-17
M1720
bbS3131
M3053
DIODE m1
m3062
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BUZ356
Abstract: T0218AA BUZ-356
Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ356
T0218AA;
BUZ356
T-39-13
T0218AA
BUZ-356
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BZY91-C75R
Abstract: BZY91 BZY91-C75 BZY91-C7V5 BZY91-C7V5R C51 diode
Text: N AMER PHILIPS/DISCRETE 2SE » MAINTENANCE T Y P t n lli :«, ^ 53^31 0022077 1 B b ^ Y y i SfcKltfS A REGULATOR DIODES Also available to B S 9305-F052 A range o f diffused silicon diodes in DO-5 metal envelopes, intended fo r use as voltage regulator and
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bs3131
BS9305-F052
BZY91-C7V5
BZY91-C75.
BZY91-C7V5R
BZY91-C75R.
bb53131
00S2B02
BZY91
BZY91-C75R
BZY91-C75
C51 diode
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BDX62
Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
Text: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,
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bbS3131
D01TIN7
BDX62;
BDX62B;
BDX63,
BDX63A,
BDX63B
BDX63C.
BDX62
transistor BDX62
BDX63A
bdx62a
BDX62C
BDX62B
BDX63
BDX63C
fxs 100 10
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