TITIS3T31 Search Results

bsd214

Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
Contextual Info: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high

T-33-73

Abstract: BUT21C BUT21B IEC134 BUT21
Contextual Info: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control

BFR84

Abstract: transistor bfr84
Contextual Info: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,

optocoupler 357

Contextual Info: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio

r3305

Abstract: PTB32005X PTB32001X PTB32003X
Contextual Info: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

transistor BD 263

Contextual Info: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in

CNX62

Abstract: BS415 sot174
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.

BGD601

Contextual Info: bbiB'm Philips Semiconductors 0032323 lì44 I AP X Product specification BGD601 CATV amplifier module N AUER P H I L I P S / D I S C R E T E PINNING-SOT115C FEATURES DESCRIPTION PIN • Excellent linearity PIN CONFIGURATION input • Extremely low noise 1

s3331

Contextual Info: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching

Contextual Info: CNX48U OPTOCOUPLER T O /& t > C —Z Z j Opto-isolator comprising an infrared em itting G aAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in line D IL envelope. Features • V e ry high output/input D C current transfer ratio

BUK427-400A

Abstract: 100-P BUK427-400B lD25-c RI LGR
Contextual Info: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in