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    BDX65B Search Results

    BDX65B Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDX65B Comset Semiconductors NPN SILICON DARLINGTON Original PDF
    BDX65B Philips Semiconductors Silicon Darlington Power Transistors Original PDF
    BDX65B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=117 Original PDF
    BDX65B Motorola European Master Selection Guide 1986 Scan PDF
    BDX65B Mullard Quick Reference Guide 1977/78 Scan PDF
    BDX65B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDX65B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDX65B Unknown Transistor Replacements Scan PDF
    BDX65B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDX65B Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDX65B Unknown Transistor Replacements Scan PDF
    BDX65B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDX65B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDX65B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDX65B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDX65B Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BDX65B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDX65B

    Abstract: No abstract text available
    Text: BDX65B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDX65B O204AA) 31-Jul-02 BDX65B

    BDX65B

    Abstract: BDX64B
    Text: SavantIC Semiconductor Product Specification BDX65B Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·Complement to type BDX64B APPLICATIONS ·Designed for power amplification and switching applications. PINNING See Fig.2 PIN DESCRIPTION


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    PDF BDX65B BDX64B BDX65B BDX64B

    BDX65B

    Abstract: No abstract text available
    Text: BDX65B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDX65B O204AA) 16-Jul-02 BDX65B

    bdx65b

    Abstract: No abstract text available
    Text: BDX65B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDX65B O204AA) 18-Jun-02 bdx65b

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


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    PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    BDX65

    Abstract: BDX65C BDX65B BDX65A
    Text: NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-BaseVoltage VEBO Emitter-Base Voltage IC RMS IC Collector Current


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    PDF BDX65 BDX65A BDX65B BDX65C BDX65 BDX65C BDX65B BDX65A

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    darlington transistor C 3300

    Abstract: BDX65 BDX65A BDX65B bdx65c transistor Audio Output Transistor Amplifier BDX65C BDX64* darlington bdx64
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDX64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


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    PDF BDX64/A/B/C BDX65 BDX65B BDX65A BDX65C darlington transistor C 3300 BDX65 BDX65A BDX65B bdx65c transistor Audio Output Transistor Amplifier BDX65C BDX64* darlington bdx64

    PHILIPS BDX65

    Abstract: BDX65 PHILIPS BDX64
    Text: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,


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    PDF BDX65; BDX65B; BDX64, BDX64A, BDX64B BDX64C. BDX65 bb53T31 PHILIPS BDX65 BDX65 PHILIPS BDX64

    PHILIPS BDX65

    Abstract: transistors ai 757 BDX65 PHILIPS BDX64 BDX64* darlington BDX65B 1981-R BDX65C darlington transistor C 3300 BDX64A
    Text: If N AMER P H I L I P S / D I S C R E T E ^ 53^31 D a m ? ? ESE D 1 • BDX65; 65A BDX65B; 65C T - 3 3 - 2 ? SILICON DARLINGTON POW ER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,


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    PDF BDX65; BDX65B; T-33-2? BDX64, BDX64A, BDX64B BDX64C. BDX65 PHILIPS BDX65 transistors ai 757 PHILIPS BDX64 BDX64* darlington BDX65B 1981-R BDX65C darlington transistor C 3300 BDX64A

    BDY11

    Abstract: BDY23 BDX65C
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC


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    PDF BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: 4ÖE D • 0133107 00GG44T 5EMELABI 7Ö7 ■ SMLB n LT]> T.a.?.et BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code HR HR HR HR HR HR HR HR CECC CECC CECC HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR CECC CECC CECC


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    PDF 00GG44T BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67

    BUT16

    Abstract: MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
    Text: POWER TRANSISTORS — BIPOLAR METAL TO-204AA Formerly TO-3 CA SE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins M O D IFIE D TO -3 CASE 197-01 — 60 mil pins STYLE 1: PIN 1. 2. C A SE. BASE EM ITTER C O LLE C T O R R e s is tiv e S w itc h in g


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    PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 BUT16 MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    B0845

    Abstract: B0847 BDX45 B0682 B0848 BDX67 B0646 BD676 bdx65 BDX66
    Text: Transistors darlington transistors Type No. N -P -N 800m W s s O P -N -P « • 5 Q BSS60 V (V) (A) (A l Tj h fe min. (°C> at Ic (A) fi VcEiwt) typ. max. (MHz) TO—39 AV3 60 -6 0 80 -8 0 80 -1 0 0 60 -4 5 60 -6 0 80 -8 0 2.0 1.0 200 2000 0.5 _ TO—126 BE


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    PDF 800mW BSS60 BSS60 BSS51 BSS61 BSS52 BSS62 BDX42 BDX45 BDX43 B0845 B0847 BDX45 B0682 B0848 BDX67 B0646 BD676 bdx65 BDX66

    PHILIPS BDX64

    Abstract: BDX64
    Text: 11 tibS3T31 DOlTIb? 1 • E5E D N AMER P H IL IP S /D IS C R E T E BDX64; 64A BDX64B; 64C J V r - 3 S - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX65, BDX65A,


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    PDF tibS3T31 BDX64; BDX64B; BDX65, BDX65A, BDX65B BDX65C. BDX64 PHILIPS BDX64 BDX64

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931