Contextual Info: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501LJ • JANTX level (2N3501LJX)

2N3500L

Abstract: 2N3501L
Contextual Info: Data Sheet No. 2N3501L Generic Part Number: 2N3500L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/366 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case. •

Contextual Info: 2N3501 MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • 150 Volts 500mAmps TO-39 Package Meets MIL-S-19500/366

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2N 3501 $ id L SEMICONDUCTORS Type 2N3501 G eneric Part Num ber: 2N3500 G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S

2n3498

Contextual Info: 2N3498L thru 2N3501L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498L thru 2N3501L epitaxial planar transistors are military qualified up to a

2N3501

Abstract: 2N3501UB 2n3500
Contextual Info: JANS 2N3498 thru JANS 2N3501 RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 Qualified Levels: JANSM, JANSD, JANSP, JANSL and JANSR DESCRIPTION This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

2N3501LJV

Abstract: 2N3501LJX 2N3501L 2N3501LJ 2N3501LJS
Contextual Info: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501LJ • JANTX level (2N3501LJX)

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N3501

Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501J • JANTX level (2N3501JX)

Contextual Info: 2N3501+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

Contextual Info: 2N3501+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

2n3501ub

Abstract: microsemi ub package tape reel jans2n3501ub
Contextual Info: JANS 2N3501UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA

Contextual Info: 2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a

Contextual Info: 2N3501 MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • • Meets MIL-S-19500/366 Collector-Base Voltage 150V

150M

Abstract: 2N3501
Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

ic 4541 data sheet

Abstract: 2N3501UBJX 2N3501UB 2N3501UBJ 2N3501UBJS
Contextual Info: 2N3501UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501UBJ • JANTX level (2N3501UBJX)

bi 370 transistor e

Contextual Info: Micmsemi a wmcnmwn, m m m 580 Pleasant St. W atertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N3501 Features • • • • 150 Volts 500mAmps Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS NPN

2N3501 MOTOROLA

Abstract: 2N3499 n-3500
Contextual Info: MOTOROLA SC XSTPS/R F hflE D • b3t.72SH GGTÌ442 SÔ7 ■ MOTb 2N3499 thru 2N3501* M A X I M U M R A T IN G S 2N3499 2N3500 2N3501 U n it Sym bol C o llector-E m itter V oltag e V CEO 100 150 V dc C o llector-B ase V oltage VCBO 100 150 V dc E m itter-Base V olta g e

2N3501 MOTOROLA

Abstract: 2N3501 k5c transistor 2N3501JAN AICB
Contextual Info: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N3501

Abstract: 2N3501J 2N3501JS 2N3501JV 2N3501JX MIL-PRF-19500/-2N3501
Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)