Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BD 130 NPN TRANSISTOR Search Results

    BD 130 NPN TRANSISTOR Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    BD 130 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


    OCR Scan     		PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


    OCR Scan     		PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    SC08810

    Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
    Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


    OCR Scan     		PDF BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 SC08810 B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    Untitled

    Abstract: No abstract text available
    Text: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD 436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage C ollecto r E m itter Voltage C ollecto r E m itter Voltage


    OCR Scan     		PDF BD433/435/437 BD434, BD438 BD435 BD437 BD433

    BD437

    Abstract: 100MA 45 V NPN BD433 BD434 BD435 BD436 BD438 transistor bd435
    Text: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD 436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage C ollector E m itter Voltage C ollector E m itter Voltage


    OCR Scan     		PDF BD433/435/437 BD434, BD436 BD438 BD433 BD435 BD437 BD437 100MA 45 V NPN BD434 BD435 transistor bd435

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan     		PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan     		PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


    OCR Scan     		PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    THC3251A

    Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro


    OCR Scan     		PDF SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


    OCR Scan     		PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    BDW 16.24K5000-C2-5

    Abstract: No abstract text available
    Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


    OCR Scan     		PDF Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 A23SbOS BDW 16.24K5000-C2-5

    BDY13

    Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
    Text: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


    OCR Scan     		PDF Q62702-D378 Q62702-D378-V4 Q6270 BDY13 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


    OCR Scan     		PDF

    TRANSISTOR BDX

    Abstract: TCA 875 BDX25 tca 271 tic 272 Bd 130 NPN transistor
    Text: BDX25 NPN Silicon power transistor for high-quality AF output stages and switching applications BDX 25 is an epitaxial NPN silicon planar power transistor in the case 9 A 2 DIN 41 875 SOT-9 . The collector is electrically connected to the case. For insulated mounting


    OCR Scan     		PDF BDX25 BDX25 62702-D Q62901 62901-B TRANSISTOR BDX TCA 875 tca 271 tic 272 Bd 130 NPN transistor

    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


    OCR Scan     		PDF 2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2

    Bow94c

    Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222