5360-J
Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°
|
OCR Scan
|
PDF
|
fl23SbOS
T13/4
5360-DG
5360-GK
5360-E
LYS360-H
5360-F
5360-HL
5360-FJ
5360-J
5360-K
lg diode
C 5360
LG 42 t
5360
5360E
|
transistor BC 153
Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
Text: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF
|
OCR Scan
|
PDF
|
23SbQS
0Q04104
BC1401>
Q60203-X140
Q60203-X140-V6
Q60203-X140-V10
Q60203-X140-V16
Q60203-X140-P
140/BC160
Q62702-C228-S2
transistor BC 153
TRANSISTOR BC 141
BCY41
BC transistor series
transistor BC SERIES
TRANSISTOR BC140
transistor BC 310
bc 103 transistor
transistor bc 103
transistor C719
|
BF410C
Abstract: a5175
Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
|
OCR Scan
|
PDF
|
fl23SbQS
Q68000-A5440
68000-A5172
68000-A5173
68000-A5174
68000-A5175
0Q044
BF410D
BF410C
a5175
|
C67078-A1609-A3
Abstract: 0014fl3b kds 9a
Text: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description
|
OCR Scan
|
PDF
|
fl23sbqs
C67078-A1609-A3
C67078-A1609-A3
0014fl3b
kds 9a
|
siemens LFL 1 635
Abstract: siemens LFL 635 5360-HL 5360-H 5360-K 5360-G
Text: SIEMENS AKTIENGESEL LSCH AF 47E D • fl23SbQS 0DS7131 T « S I E G SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG T=-4\>Z\ 5360 5360 5360 5360 LED Lamps 1VU 5 mm LED LAMP FEATURES * High Light Output * Diffused Lens • Wide Viewing Angle 70° • With Standoffs
|
OCR Scan
|
PDF
|
fl23SbQS
0DS7131
LYS360-H
5360-HL
5360-J
5360-K
5360-GK
5360-H
5360-JM
siemens LFL 1 635
siemens LFL 635
5360-G
|
buz 90 af
Abstract: No abstract text available
Text: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2
|
OCR Scan
|
PDF
|
fl23SbQS
C67078-A1609-A3
buz 90 af
|
TRANSISTOR T 410
Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
|
OCR Scan
|
PDF
|
fl235bOS
Q68000-A5440
Q68000-A5172
Q68000-A5173
Q68000-A5174
Q68000-A5175
BF410B
Vbs-10V
0G04MÃ
BF410D
TRANSISTOR T 410
abf410
DSG52
922S
BF410D
410c
BF410A
BF410C
|
SIEMENS BST
Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Text: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature
|
OCR Scan
|
PDF
|
16-Bit
3164165AT
3165165AT
3166165AT
fiE3Sb05
A712S
SIEMENS BST
siemens 230 96
SIEMENS BST P
smd 42t
MAS 10 RCD
SIEMENS BST h 05 60
SIEMENS BST g 02 60
HPC16
SIEMENS BST N 35
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency
|
OCR Scan
|
PDF
|
80C517/80C537
80C517
80C537
80C517
80C51
16-bit
235bG5
12QflÃ
8E100X
|
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com
|
OCR Scan
|
PDF
|
T-75-37-07
235b05
82532N-TS
PL-CC-68
MARKING CODE SMD JW
TXC CXO
A51AC
isdn modem
2S34
chmn
m1p7
SAB-R3000
|
Untitled
Abstract: No abstract text available
Text: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
|
OCR Scan
|
PDF
|
fl23SbOS
000MS21
62702-F542
82-02t"
|
sda 5241
Abstract: SDA5241 s0003
Text: SIEM ENS Data Slicer for Teletext SDA 5231-5 Preliminary Data Bipolar IC Features • Crystal-stable data clock regeneration for a bit rate Of 6.9375 MHz • Separation and regeneration of teletext information • Separation of the horizontal and vertical synchroni
|
OCR Scan
|
PDF
|
67000-A5162
P-DIP-28
235b05
Q0b33Lj7
S0003
a23SbOS
00b33bfl
P-DIP-28-1
P-DIP-40-1
sda 5241
SDA5241
|
buz 90 af
Abstract: No abstract text available
Text: ÖÖD D • ÔSBSbQS 0014ä2fl b m s i E G 880 14828 D BUZ 88 ' T ~ 3 Cf ~ / 3 S I E M E N S A K T I E N G E S E L L S C H A F -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case «>s I0 = 800 V
|
OCR Scan
|
PDF
|
C67078-A1609-A2
fl23Sfe
buz 90 af
|
MIL-D-87157
Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Text: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
|
OCR Scan
|
PDF
|
AE3Sb05
MSD2010TXV/TXVBT"
MSD2011TXV/TXVB
MSD2012TXV/TXVB
MSD2013TXV/TXVB
fiE35b05
GD27QQÃ
-4I-37
-335mA
410mA
MIL-D-87157
MSD2010
MSD2011
MSD2012
MIL-STD-750 2072
Appnote44
MIL-STD-883-method 2016
|
|
|
Q62702-F395
Abstract: bf363 Q62702-F396 BF 362 BF362
Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and
|
OCR Scan
|
PDF
|
Q0QHM77
T0119
Q62702-F395
Q62702-F396
fl23SbQS
-BF363
bf363
Q62702-F396
BF 362
BF362
|
BUZ28
Abstract: C67078-A1608-A2
Text: öflD D • 88D flS3 5 b Q 5 D014S34 □ « S I E G 14534 D 7~ . U BUZ 28 SIEMENS A K T I E N GE SE LL SCH AF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description C ase a 100 V l^DS
|
OCR Scan
|
PDF
|
flS35bQ5
D014S34
C67078-A1608-A2
fl23SbOS
BUZ28
C67078-A1608-A2
|
4015 IC circuit diagram
Abstract: 804 1NL SIEMENS capacitor uv Y6960 arm8
Text: SIEMENS DSR QPSK-Demodulator SDA6310 Prelim inary Data Features • • • • • • • • Internal reference voltage source. Autom atic gain control AGC with integrated AG C amplifier. O utput for adjustable delayed tuner AGC. O scillator circuitry M r VCO with external varicaps.
|
OCR Scan
|
PDF
|
Q67000-A5088
P-DIP-20-1
23SLD5
355fl
ues048z7
023Sb05
4015 IC circuit diagram
804 1NL
SIEMENS capacitor uv
Y6960
arm8
|
Transistor BFT 44
Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the
|
OCR Scan
|
PDF
|
23SbOS
Q004701
Q62702-F390
Transistor BFT 44
transistor tt 2078
TRANSISTOR 2SC 458
Transistor B C 458
transistor npn d 2078
B-01
BFT12
Q62702-F390
gp 823
Q0047
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b
|
OCR Scan
|
PDF
|
O-220
C67078-S1321-A2
023SbD5
OOA4471
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
|
OCR Scan
|
PDF
|
72-Bit
72V1600GS-50/-60
72V1610GS-50/-60
023St
HYM72V1600/10GS-50/-60
72-ECC
L-DIM-168-7
16MX72
DM168-7
|
BUZ100
Abstract: No abstract text available
Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A
|
OCR Scan
|
PDF
|
O-220
BUZ100L
C67078-S1354-A2
BUZ100
|
Transistor 2SC 2166
Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Text: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.
|
OCR Scan
|
PDF
|
aE35b05
BSV65
Transistor 2SC 2166
transistor IR 652 P
2166 1j1
bsv 81
X12X15
|
MSC SDA
Abstract: SDA9092 DS011 DD011
Text: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory
|
OCR Scan
|
PDF
|
PL-CC-68
Q67100-H8353
535b05
MSC SDA
SDA9092
DS011
DD011
|
Untitled
Abstract: No abstract text available
Text: SIEMENS HITFET BTS949 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continuous drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection Load current (ISO)
|
OCR Scan
|
PDF
|
BTS949
fl23SbQS
TQ220/5_
T0220/5
Q67060-S6703-A2
E3062A
Q67060-S6703-A4
E3043
|