pir 815
Abstract: No abstract text available
Text: PRELIMINARY & Am79C930 Advanced Micro Devices PCnet -Mobile Single Chip Wireless LAN Media Access Controller DISTINCTIVE CHARACTERISTICS • Capable of supporting the IEEE 802.11 standard draft ■ Supports the Xircom Netwave™ Media Access Control (MAC) protocols
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Am79C930
15-byte
PQT144
144-Pin
16-038-PQ
02575E7
pir 815
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Untitled
Abstract: No abstract text available
Text: PN4391 to 4393 JV N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA •H max. 40 ^to t
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PN4391
PN4391
PN4392
PN4393
D03SA3S
bb53T31
003Sfl3b
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Z80CTC
Abstract: Z0843006 Z0843004 Z84C3006 Z84C3008 Z84C3010 z80 ctc technical manual z80-ctc
Text: <£ 3 L G S P r o d u c t S p e c ific a tio n Z8430/Z84C30 NMOS/CMOS Z80 CTC Counter/Timer Circuit FEATURES • Four independently programmable counter/timer channels, each with a readable downcounter and a selectable 16 or 256 prescaler. Downcounters are
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Z8430/Z84C30
Z0843004
Z0843006
Z84C3006
Z84C3008
Z84C3010
Z80CTC
z80 ctc technical manual
z80-ctc
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current
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32-Pin
Am28F020A
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transistor BD 263
Abstract: No abstract text available
Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in
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BFR29
003Sf
bb53331
bb53T31
0035T03
transistor BD 263
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Untitled
Abstract: No abstract text available
Text: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.
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2N4856
2N4858
2N4861
2N4857
2N4860
2N4856
2N4859
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qml-38535
Abstract: FORM2233 TVP3010 10g-147
Text: REVISIONS LTR DESCRIPTION Make change to t^g test limit and delete footnote seven entirely as specified in table I. - ro DATE YR-MO-DA APPROVED 98-03-26 R. MONNIN REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS
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64-BIT,
FORM2233
1G0M70fl
003Sbl0
qml-38535
TVP3010
10g-147
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z80-sio
Abstract: No abstract text available
Text: P r o d u c t S p e c if ic a t io n < £ 2 iL G 5 Z8440/1/2/4, Z84C40/1/2/3/4 S er ia l Input /O utput Co n t r o ller FEATURES • Two independent full-duplex channels, with separate control and status lines for modems or other devices. ■ Data rate in the x1 dock mode of 0 to 2.0M bits/
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Z8440/1/2/4,
Z84C40/1/2/3/4
z80-sio
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Untitled
Abstract: No abstract text available
Text: < £ 2 i L G S P ro d u c t S p e c ific a tio n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programmed to match the speed of
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Z8410/Z84C10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA- TC514900AJL70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514900AJL70/80
TC514900AJL
0025fcjl1
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M37702E4AFS
Abstract: M37702E4 AL P3d m37703e4axxxsp M37702M2AXXXFP M37702M2BXXXFP m37702e2 E7702
Text: ELECTRICAL CHARACTERISTICS 15.1 Absolute maximum ratings_ This chapter describes electrical characteristics of the M 37702M2BXXXFP and M37702M2AXXXFP. For the low voltage version, refer to section “18.4 E le c tric a l c h a ra c te ris tic s .”
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M37702M2BXXXFP
M37702M2AXXXFP.
M37702M2BXXXFP
A16/D0-A23/D7
54ia2fl
M37702E4AFS
M37702E4
AL P3d
m37703e4axxxsp
M37702M2AXXXFP
m37702e2
E7702
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siemens isdn
Abstract: siemens 3FT
Text: SIEMENS AKTIENÊESEL LSCH AF M?E D • fl23Sfc.QS OOBSfifiS 2 H S I E 6 S I E M E N S 'T-P5-u-3ft Advanced CMOS Frame Aligner ACFA Preliminary Data PEB 2035 CMOS 1C Type Ordering Code Package PEB 2035-C PEB 2035-N PEB 2035-P Q67100-H8358 Q67100-H8684 Q67100-H8359
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fl23Sfc
Q67100-H8358
Q67100-H8684
Q67100-H8359
2035-C
2035-N
2035-P
24-channel
32-channel
T-75-11-29
siemens isdn
siemens 3FT
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78R05
Abstract: A78R05 KA78R05 diagram ka78r05 samsung CD-ROM pin diagram CD-ROM diagram 2080T KA78
Text: KA78R05 ELECTRONICS Industrial LOW D R O PO U T V O L T A G E R E G U L A T O R The KA 78R 05 is a low-dropout voltage regulator suitable for various elect ronic equipments. It provides constant voltage power source with T 0 2 2 0 4-lead full molded PKG.
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KA78R05
KA78R05
A78R05
-220F
003Sfl4S
32fl4b
78R05
KA78R05 diagram
samsung CD-ROM pin diagram
CD-ROM diagram
2080T
KA78
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3G40
Abstract: LS204CB J7931 SCNA20 103KQ T-79-31 7931 t7931
Text: 7=12=1237 DQ3Sflbb 2 H S G T H 42E D ST S G S - T H O I / 3S O N ^ tÏ Ï ôm s o n LS204 IM T '7 9 '3 1 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER • SINGLE OR SPLIT SUPPLY OPERATION ■ LOW POWER CONSUMPTION ■ SHORT CIRCUIT PROTECTION ■ LOW DISTORTION, LOW NOISE
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LS204
103KQ
3G40
LS204CB
J7931
SCNA20
T-79-31
7931
t7931
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Untitled
Abstract: No abstract text available
Text: 4N25 4N25A 4N26 4N27 4N28 OPTOCOUPLERS This product range is one o f the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage com ply w ith the specifications o f the main part o f the optocoupler market.
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4N25A
E90700
0110b
003Sfc
bbS3T31
003SL
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500mA H-bridge
Abstract: CS-3710M15
Text: CS-3710 0.5A Fully Protected Dual H-Bridge Driver D escription The CS-3710 is a smart dual 0.5A Hbridge driver u sed in microprocessor controlled stepper motor system s. The CS-3710 provides bidirectional current using tw o independent 0.5A H -bridge drivers. On chip com m utation diod es
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CS-3710
00Q35TD
CS-3710M15
50b755b
500mA H-bridge
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