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    Zetex / Diodes Inc BCY65EBES

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    FERENT BCY65EC

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    BCY65 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BCY65 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BCY65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCY65 Philips Semiconductors Silicon Planar Epitaxial Transistor Scan PDF
    BCY65E Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BCY65E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY65E Micro Electronics Semiconductor Device Data Book Scan PDF
    BCY65E Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    BCY65E Motorola The European Selection Data Book 1976 Scan PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY65E Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65E Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BCY65E Siemens NPN silicon planar transistors Scan PDF
    BCY65E Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BCY65E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BCY65E7 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BCY65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BCY65EIX Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.350Â h(FE) Max. Current gain.


    Original     		BCY65EIX Freq250M StyleTO-18 Code3-12 PDF

    bcv59

    Abstract: N705 bcv-59 ZTX301
    Text: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C


    OCR Scan     		000b675 BC546A BC546B BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B bcv59 N705 bcv-59 ZTX301 PDF

    2N2222 MPS2222

    Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
    Text: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630


    OCR Scan     		BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 2N2222 MPS2222 2N3906 NPN switching transistor 2N4403 2N4402 2N4403 BCY77P PDF

    2N39045

    Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A
    Text: T A B L E 4 : P N P SW ITCHING M ax V CE satl Min h FE at Max. Sw itching Times at V C EO M ax 'c V mA M PS2907A 60 600 BCY77P 60 100 0 .2 5 10 0.25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P


    OCR Scan     		MPS2907A MPS2222AÂ BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 2N4400 2N39045 2N4400 2N4401 BCY59P BCY65EP MPS2222A PDF

    BCY65

    Abstract: BCY65-VIII BCY65-IX BCY65-VII BCY65IX
    Text: BCY65 T " 3 5 '- / I PHILIPS INTERNATIONAL SbE D 7110ÖSb DDM21D2 T Sü « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications.


    OCR Scan     		BCY65 T-35-- 7110flSb DDM21D2 BCY65-VII 195S2; BCY65 BCY65-VIII BCY65-IX BCY65-VII BCY65IX PDF

    2N4400

    Abstract: 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A ZTX360
    Text: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns ^off V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P 45 200 0.35 10 0.25 120 630


    OCR Scan     		BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 2N4402 2N4403 BCY77P BCY79P MPS2907A PDF

    bcy65

    Abstract: BCY65IX
    Text: BCY65 _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal package w ith the collector connected to the case and designed for use in am plifier and switching applications. Q UICK REFERENCE D A T A Collector-emitter voltage open base


    OCR Scan     		BCY65 BCY65 BCY65IX PDF

    2N2222 MPS2222

    Abstract: 2N3906 ZTX313 ZTX510 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
    Text: TABLE 4 : PNP SWITCHING Max V CE satl Min fT hFE V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P 2 N 4403 40 600 0 .4 150


    OCR Scan     		MPS2907A MPS2222AÂ BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 2N4400 2N2222 MPS2222 2N3906 ZTX313 ZTX510 2N4400 2N4401 BCY59P BCY65EP PDF

    2N2222 MPS2222

    Abstract: 2N2222 MPS2222 npn transistor ZTX312 ZTX313
    Text: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE Max 'c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40 600 0.4 150 15 100 300 150 200 20 35 255 150 2N4401


    OCR Scan     		PDF

    BCY65

    Abstract: No abstract text available
    Text: I I N AMER PHILIPS/DISCRETE b'lE D • bb53331 □DS7b32 2SA BCY65 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications. QUICK REFERENCE DATA


    OCR Scan     		bb53331 DS7b32 BCY65 BCY65-VII BCY65 PDF

    2N5086

    Abstract: 2N5087 2N5209 2N5210 BC550P BC560P BCY65EP BCY77P ZTX331 ZTX382
    Text: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level am plification and are ideally suited for audio pre-amplifiers as well as universal applications. Max Type BCY65EP ^CEO Max V CE sat at h FE 'b Min Max at Min fT


    OCR Scan     		BCY65EP BCY77P 2N5209 30-15k 2N5086 2N5210 2N5087 ZTX331 ZTX531 2N5086 2N5087 BC550P BC560P BCY77P ZTX382 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 bE ]> • cH 7 05 7 fl G00LiT3b ATM ■ Z E T B ZETEX SEMICONDUCTORS Max VCE sat| t ^BLE Max •c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40


    OCR Scan     		G00LiT3b PS2907A BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 PS2907 PDF

    2N2222A zetex

    Abstract: No abstract text available
    Text: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58


    OCR Scan     		BSY55 BCY65E 2N2484 BCY59 BCY56 2N930 2N2219A 2N2222A BCY58 BSY51 2N2222A zetex PDF

    BCY65

    Abstract: BCY65-IX BCY65-VII BCY65-VIII 27B3-2
    Text: I I N AMER PHILIPS/DISCRE TE bTE T> • bbSB^l [][]27b32 25Ô BCY65 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in T O -18 metal envelope w ith the collector connected to the case and designed for use in am plifier and switching applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		27b32 BCY65 BCY65-VII 990fi BCY65 BCY65-IX BCY65-VII BCY65-VIII 27B3-2 PDF

    BCY58C

    Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
    Text: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C


    OCR Scan     		BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BCY58C bc547b ferranti BCY59A bcy59b PDF

    transistor 2N3905

    Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
    Text: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0


    OCR Scan     		BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 transistor 2N3905 2N4402 2N4403 BCY77P BCY79P MPS2907A PDF

    2N4400

    Abstract: 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907
    Text: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE at M ax. Switching Tim es at V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P


    OCR Scan     		MPS2907A MPS2222AÂ BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 2N4400 2N4400 2N4401 BCY59P BCY65EP MPS2222A MPS2907 PDF

    2N2222 MPS2222

    Abstract: 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4400 2N4401 2N4402
    Text: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P


    OCR Scan     		BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 2N2222 MPS2222 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4402 PDF

    bc238

    Abstract: No abstract text available
    Text: SbE 3> • ^70570 0DG7DM7 3 3 1 ■ Z E T B SEMICONDUCTOR DICE zetex semiconductors NPN SM ALL SIGNAL TRA N SISTO R S V CBO V CE0 hFE at •CBO Dice type Min. Min. Max. at V CB Volts Volts BC 546A BC546B ZTX304 BCY65EA BC182 BC 107A BC107B BC237 BC 547A BC547B


    OCR Scan     		PDF

    BC548C

    Abstract: BC107A BC108A BC108b ZTX301
    Text: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C


    OCR Scan     		BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC548C BC108A BC108b ZTX301 PDF

    2N39045

    Abstract: No abstract text available
    Text: T A B L E 4 : PNP SWITCHING Max V CE|Sat Max Type V CEO Min h FE at at at fT Max. Switching Times at Complement !c Min Max !c ^on !c •c •b mA mA mA MHz mA ns ^off ns <c mA V mA MPS2907A 60 600 BCY77P 60 100 0.2 5 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP


    OCR Scan     		MPS2907A MPS2222A§ BCY77P BCY65EP BCY79P BCY59P 2N4401 2N4400 MPS2907 MPS2222 2N39045 PDF

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V PDF

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 PDF

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 PDF