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    BAD BLOCK SAMSUNG Search Results

    BAD BLOCK SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    663MILFT Renesas Electronics Corporation PLL Building Block Visit Renesas Electronics Corporation
    673M-01LF Renesas Electronics Corporation PLL Building Block Visit Renesas Electronics Corporation
    663MLF Renesas Electronics Corporation PLL Building Block Visit Renesas Electronics Corporation
    673M-01LFT Renesas Electronics Corporation PLL Building Block Visit Renesas Electronics Corporation
    673M-01ILF Renesas Electronics Corporation PLL Building Block Visit Renesas Electronics Corporation

    BAD BLOCK SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


    Original     		128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    hard disk ATA pcb schematic

    Abstract: samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR
    Text: SAMSUNG ATA FLASH CONTROLLERS REFERENCE DESIGN MANUAL Samsung’s ATA Flash Controllers Reference Design Manual CompactFlash / PC Card / IDE Disk HELP DESK - About Controller : engineer@sec.samsung.com - About Flash : ywko@sec.samsung.com Samsung Electronics Co.,LTD


    Original     		S3CI910X 256Mb 128MB hard disk ATA pcb schematic samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR PDF

    oneNand

    Abstract: oneNand flash ST OneNAND samsung onenand ST nor flash Flash Memory SAMSUNG OneNAND
    Text: Datalight OneBoot for Samsung OneNAND Flash ™ The Datalight software provides a fast way for designers to take advantage of OneNAND Flash, the market’s highestperformance flash memory. OneNAND offers additional benefits like low Flash Software Layer Helps Provide


    Original     		DS-05-NAND-002 oneNand oneNand flash ST OneNAND samsung onenand ST nor flash Flash Memory SAMSUNG OneNAND PDF

    KLM8G2FEJA-A001

    Abstract: KLMAG4FEJA-A001 KLM8G2FEJA KLMBG8FEJA-A001 KLMAG4FEJA-B001 klm8g samsung eMMC 4.5 Samsung eMMC 4.41 KLMXGXFEJA-X001 KLMCGAFEJA-B001
    Text: Hello All, 8/16/32GB 27nm eMMC parts are now available to sample CS type ! Please input sample requests for all customers using old generations of moviNAND now. We'll expedite for ASAP delivery. SEC will ramp 27nm production quickly so it is imperative that all customers get qualified ASAP.


    Original     		8/16/32GB KLMXGXFEJA-X001 KLM8G2FEJA-A001 KLMAG4FEJA-A001 KLM8G2FEJA KLMBG8FEJA-A001 KLMAG4FEJA-B001 klm8g samsung eMMC 4.5 Samsung eMMC 4.41 KLMCGAFEJA-B001 PDF

    Flex-OneNAND Samsung

    Abstract: Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash
    Text: Flex-OneNAND4G KFG4GH6x4M-DxBx Flex-OneNAND8G(KFH8GH6x4M-DxBx) Flex-OneNAND16G(KFWAGH6x4M-DxBx) FLASH MEMORY KFG4GH6x4M KFH8GH6x4M KFWAGH6x4M 4Gb Flex-OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		Flex-OneNAND16G 80x11 Flex-OneNAND Samsung Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash PDF

    reset nand flash HYNIX

    Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
    Text: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


    Original     		S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand PDF

    nand flash controller

    Abstract: NAND FLASH Controller Toshiba "ECC" SSOP28 NAND SAMSUNG SPEC Nand flash spec samsung
    Text: eKF5250 USB full speed NAND flash controller Preliminary SPECIFICATION 1. General Description The eKF5250 provides a high-performance interface to bridge USB and NAND Flash compliance device which can be used to implement of flash memory storage device with USB


    Original     		eKF5250 eKF5250 1005B, nand flash controller NAND FLASH Controller Toshiba "ECC" SSOP28 NAND SAMSUNG SPEC Nand flash spec samsung PDF

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0 PDF

    flash hamming ecc

    Abstract: 29F0408RP radiation solid state recorder
    Text: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte


    Original     		29F0408RP 528-Byte 00Rev1 flash hamming ecc 29F0408RP radiation solid state recorder PDF

    SPEAKERPHONE

    Abstract: D6351A-11 D6305B D6351A KM29N040
    Text: D6351A Flash TAD Chip for an all Digital Telephone Answering Device with True FULL Duplex SpeakerPhone General Description The D6351A chip is a digital speech/signal processing subsystem that implements all functions of TRUESPEECH speech compression and voice prompts, telephone line signal processing, flash memory management, and True FULL


    Original     		D6351A D6351A PO-12/96 SPEAKERPHONE D6351A-11 D6305B KM29N040 PDF

    400F

    Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT k9f4008w0atcb0
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT 400F K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 k9f4008w0atcb0 PDF

    samsung toggle mode NAND

    Abstract: NAND FLASH SAMSUNG S3CI9E0X01 toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand
    Text: S3CI9E0X01 FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 FLASH INTERFACE DEVICE Revision History


    Original     		S3CI9E0X01 S3CI9E0X01 samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand PDF

    TC58NVG3D4CTG10

    Abstract: TC58NVG3D4CTG tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC ADSP-BF53x
    Text: Engineer-to-Engineer Note a EE-302 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.


    Original     		EE-302 ADSP-BF53x TC58NVG3D4CTG ADSP-BF533 ADSP-2126x EE-279) EE-302) TC58NVG3D4CTG10 tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC PDF

    ADM3307

    Abstract: PCM-989 U602 G100 J503 J504 J506 J604 U600 U601
    Text: phyCORE-LPC3180 HARDWARE MANUAL EDITION APRIL 2007 A product of a PHYTEC Technology Holding company phyCORE-LPC3180 In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark and copyright ( ) symbols


    Original     		phyCORE-LPC3180 L-681e phyCORE-LPC3180 D-55135 ADM3307 PCM-989 U602 G100 J503 J504 J506 J604 U600 U601 PDF

    k9f1g08u0d

    Abstract: K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report
    Text: Rev. 0.1, May. 2010 K9F1G08U0D Advance 1Gb NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K9F1G08U0D K9F1G08U0C 200us 700us 250us 750us k9f1g08u0d K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report PDF

    K9F1G08

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
    Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y PDF

    vga cmos

    Abstract: samsung CMOS image sensor S5K* CMOS CMOS image sensor with global shutter 14 pin cmos IMAGE SENSOR CMOS global shutter cmos IMAGE SENSOR global shutter S5K437CX01 S5K437CX02 vga cmos monochrome global
    Text: S5K437CX 1/4" VGA CMOS Image Sensor DATA SHEET Revision 1.1 DOCUMENT TITLE 1/4" Optical Size 640 x 480 (VGA) 2.8V CMOS Image Sensor REVISION HISTORY Revision No. History Draft Date 0.0 Initial Draft Mar, 01. 2004 1.0 Changed the operation frequency (30MHz → 24.54MHz).


    Original     		S5K437CX 30MHz 54MHz) vga cmos samsung CMOS image sensor S5K* CMOS CMOS image sensor with global shutter 14 pin cmos IMAGE SENSOR CMOS global shutter cmos IMAGE SENSOR global shutter S5K437CX01 S5K437CX02 vga cmos monochrome global PDF

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB PDF

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor PDF

    K9F2G08U0B

    Abstract: K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B K9F2G08B0B-P
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B-P PDF

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


    OCR Scan     		KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping PDF

    Untitled

    Abstract: No abstract text available
    Text: Lucent Technologies ND14 NAND FlashTAD— CID/AECS Information Manual August 1998 2 General Specifications 2.1 User Hardware Basics 2.1.1 Power Supply System power supply requirements are 5.0 VDC. For additional information, see the following sections of the DSP1609 data sheet: Table 2. DSP1609 Power Supply


    OCR Scan     		DSP1609 PDF

    Untitled

    Abstract: No abstract text available
    Text: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass


    OCR Scan     		KM29N16000T/R 264-byte 300/js KM29N16000R) PDF