KM29N040
Abstract: KM29W040AIT KM29W040AT km29v040
Text: KM29W040AT, KM29W040AIT FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998
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KM29W040AT,
KM29W040AIT
KM29N040
KM29W040AIT
KM29W040AT
km29v040
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PDF
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400F
Abstract: KM29W040AIT KM29W040AT
Text: KM29W040AT, KM29W040AIT FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998
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Original
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KM29W040AT,
KM29W040AIT
400F
KM29W040AIT
KM29W040AT
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PDF
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400F
Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT k9f4008w0atcb0
Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998
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Original
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K9F4008W0A-TCB0,
K9F4008W0A-TIB0
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
400F
K9F4008W0A
K9F4008W0A-TCB0
K9F4008W0A-TIB0
k9f4008w0atcb0
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K9F4008W0A-TCB0
Abstract: No abstract text available
Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V
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Original
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K9F4008W0A-TCB0,
K9F4008W0A-TIB0
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
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PDF
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400F
Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT SAMSUNG NAND Flash Qualification Report
Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998
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Original
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K9F4008W0A-TCB0,
K9F4008W0A-TIB0
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
400F
K9F4008W0A
K9F4008W0A-TCB0
K9F4008W0A-TIB0
SAMSUNG NAND Flash Qualification Report
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PDF
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400F
Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT
Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V
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Original
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K9F4008W0A-TCB0,
K9F4008W0A-TIB0
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
400F
K9F4008W0A
K9F4008W0A-TCB0
K9F4008W0A-TIB0
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9F4008W0A Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998 1.1 Data Sheet 1999
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Original
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K9F4008W0A
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
K9F4008W0A-TIB0
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PDF
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Untitled
Abstract: No abstract text available
Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998
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Original
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K9F4008W0A-TCB0,
K9F4008W0A-TIB0
KM29W040AT
K9F4008W0A-TCB0
KM29W040AIT
K9F4008W0A-TIB0
50own
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29W040AT, KM29W040AIT_ FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V
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OCR Scan
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KM29W040AT,
KM29W040AIT_
KM29W040AIT
KM29V040
KM29N040
29W040
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29W040AT, KM29W040AIT FLASH MEMORY Document TitSe 512K x 8 bit NAND Flash Memory Revision History R evisio n No. H isto ry D raft Date R em ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed O perating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V
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OCR Scan
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KM29W040AT,
KM29W040AIT
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29W040AT, KM29W040AIT_ FLASH MEMORY Document Tills 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. A p rili 0th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V
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OCR Scan
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KM29W040AT,
KM29W040AIT_
KM29W040AIT
KM29V040
KM29N040
KM29W040
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TSOP 48 Package nand memory
Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.
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OCR Scan
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512KX
1Mx16
KM28N800
KM28U800
90/100/120ns
48CSP
KM28U160
80/90/120ns
KM29U128T
KM29U128IT
TSOP 48 Package nand memory
NAND flash memory
nor flash
1Mx16 flash
TSOP I
KM29N040T
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