Untitled
Abstract: No abstract text available
Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics
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M52S32162A
M52S32162A
16Bit
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Untitled
Abstract: No abstract text available
Text: 144PIN PC100 Unbuffered SO-DIMM 256MB With 16Mx8 CL2 TS32MSS64V8D2 Description Pin Identification Symbol The TS32MSS64V8D2 is a 32M bit x 64 Synchronous Function A0~A11 Address inputs TS32MSS64V8D2 consists of 16 pieces of CMOS BA0, BA1 Banks Select 4Mx8bitsx4banks Synchronous DRAMs in TSOP-II 400mil
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144PIN
PC100
256MB
16Mx8
TS32MSS64V8D2
TS32MSS64V8D2
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The
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144PIN
PC133
256MB
TS32MSS64V6L
TS32MSS64V6L
144-pin
JEP-108E
100MHZ
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Untitled
Abstract: No abstract text available
Text: AS4C64M16MD1 1 Gb 64M x 16 bit 1.8v High Performance Mobile DDR SDRAM Confidential Advanced (Rev. 1.0, Mar. /2014) Features Description 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3
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AS4C64M16MD1
cycles/64ms
25ns/
Mar/2014
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The
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144PIN
PC133
256MB
TS32MSS64V6L
TS32MSS64V6L
144-pin
JEP-108E
100MHZ
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MT48LC16M16A2 rev B
Abstract: mclf MPC8XX MT48LC8M16A2 MT48LC MPC8xx pin MT48LC8M16A2TG-75 mpc860 users manual "mpc860 users manual" *48lc16m16a2
Text: TN-48-12 Interfacing with Motorola’s MPC8XX TECHNICAL NOTE INTERFACING SDRAM DEVICES WITH MOTOROLA’S MPC8XX The addressing for the MCP8xx uses A0 as the Most Significant Bit MSB , while the MSB for the SDRAM are the bank address lines BA1 and BA0 followed by A11.
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TN-48-12
32-bit
16-bit
MT48LC8M16A2
MPC860
TN4812
MT48LC16M16A2 rev B
mclf
MPC8XX
MT48LC
MPC8xx pin
MT48LC8M16A2TG-75
mpc860 users manual
"mpc860 users manual"
*48lc16m16a2
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54PIN
Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.
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M12L32162A
16Bit
M12L32162A
54PIN
M12L32162A-7BG
M12L32162A-7TG
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16M X 16 CL3 TS16MMS64V6G Description Pin Identification The TS16MMS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MMS64V6G Symbol Function A0~A12 Address inputs BA0~BA1 Select Bank
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144PIN
PC133
128MB
TS16MMS64V6G
TS16MMS64V6G
144-pin
JEP-108E
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of
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144PIN
PC133
256MB
16MX8
TS32MSS64V6D
TS32MSS64V6D
144-pin
JEP-108E
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M52S32162A
Abstract: No abstract text available
Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics
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M52S32162A
16Bit
M52S32162A
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Untitled
Abstract: No abstract text available
Text: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.
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M12L32162A
M12L32162A
16Bit
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M52D32162A
Abstract: No abstract text available
Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)
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M52D32162A
16Bit
M52D32162A
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Untitled
Abstract: No abstract text available
Text: HYMD2326468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance
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HYMD2326468-K/H/L
32Mx64
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The
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144PIN
PC133
256MB
TS32MSS64V6L
TS32MSS64V6L
144-pin
JEP-108E
100MHZ
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Untitled
Abstract: No abstract text available
Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type K4S281632D-TL1L Model AVIC-ZH8017ZT VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address
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128Mbit
K4S281632D-TL1L
AVIC-ZH8017ZT
A0-A11
DQ0-DQ15
A10/AP
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Untitled
Abstract: No abstract text available
Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type VDD K4S281632C-TL1L AVIC-H09 Model 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address
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128Mbit
K4S281632C-TL1L
AVIC-H09
A0-A11
DQ0-DQ15
A10/AP
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Untitled
Abstract: No abstract text available
Text: HYMD116645A8-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A11, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance
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HYMD116645A8-K/H/L
16Mx64
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Untitled
Abstract: No abstract text available
Text: HYMD2646468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 93 107 90 104 pF Input Capacitance RAS, CAS, WE CIN2 93 107 90 104 pF Input Capacitance CKE0, CKE1 CIN3 63 77 58 72 pF
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HYMD2646468-K/H/L
64Mx64
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DPDD192MX8XSBY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1
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DPDD192MX8XSBY5
A10/AP
30A254-03
DPDD192MX8XSBY5
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Untitled
Abstract: No abstract text available
Text: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output
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GEX-FM903XM/UC
K4S640832E-TL1H
A0-A11
A10/AP
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Untitled
Abstract: No abstract text available
Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type M2V2840ATP-7L AVIC-H09 Model VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output
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128Mbit
M2V2840ATP-7L
AVIC-H09
A0-A11
DQ0-DQ15
A10/AP
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K4S280832B
Abstract: No abstract text available
Text: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47
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K4S280832B
A10/AP
54Pin
400mil
875mil)
A10/AP
K4S280832B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ELECTRIC 64MSDRAM Pin Configuration x4 x8 xl6 \ Vdd 54 Vss o DQO DQO 2 53 DQ15 i n NC NC DQO NC NC NC DQ1 NC NC VddQ NC DQ1 DQ1 DQ2 VssQ NC DQ3 DQ2 DQ4 VddQ NC DQ5 DQ3 DQ6 VssQ NC DQ7 Vdd NC DQML /WE /CAS /RAS /CS BA0 A13 BA1(A12) AIO A0 Al A2
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L-21029-01
64MSDRAM
54Pin
400mil
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Untitled
Abstract: No abstract text available
Text: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &
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