MAKING A10 BGA
Abstract: M52D32162A
Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS
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M52D32162A
16Bit
M52D32162A
MAKING A10 BGA
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CKE 2009
Abstract: No abstract text available
Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS
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M52D32162A
16Bit
M52D32162A
CKE 2009
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Untitled
Abstract: No abstract text available
Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 1.1 1/30 ESMT M52D32162A
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M52D32162A
16Bit
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M52D32162A
Abstract: No abstract text available
Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3
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M52D32162A
16Bit
M52D32162A
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M52D32162A
Abstract: No abstract text available
Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)
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M52D32162A
16Bit
M52D32162A
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Mobile SDRAM
Abstract: M52D32162A
Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3
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M52D32162A
16Bit
M52D32162A
Mobile SDRAM
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Untitled
Abstract: No abstract text available
Text: M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)
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M52D32162A
16Bit
M52D32162A
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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