Untitled
Abstract: No abstract text available
Text: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING R _ B _ _ DHA _ F NUMBER OF POSITIONS MOUNTING STYLE D= .250" EARS, FLUSH MOUNTING N= NO MOUNTING EARS A= SIDE MOUNTING WITH #4-40 THREADED INSERTS R= NO MOUNTING EARS, WITH BOARD LOCKS S= SIDE MOUNTING PLATING
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C10091
Drawings\C10091,
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A654
Abstract: rtc 0.0504 805468 a63a AN9766
Text: Harris Semiconductor No. AN9766 Harris Digital November 1997 Keeping Time with the Harris CDP68HC68T1 Real Time Clock and the “Millennium Bug” Author: Christopher Mazzanti Introduction T1. For the most part, this is true - if programmed correctly, the host MCU interfacing with the T1 will keep the correct
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AN9766
CDP68HC68T1
CDP68HC68T1
68HC05
1-800-4-HARRIS
A654
rtc 0.0504
805468
a63a
AN9766
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b745
Abstract: b745 diode CRC calculation mdlc VPW interface B635 B744 B744 transistor b746 MC68HC05 Applications Guide mcr 100a
Text: Order this document by AN1224/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1224 Example Software Routines for the Message Data Link Controller Module on the MC68HC705V8 By Chuck Powers Multiplex Applications INTRODUCTION The message data link controller MDLC module is a serial multiplex communication module designed to
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AN1224/D
AN1224
MC68HC705V8
J1850-Class
b745
b745 diode
CRC calculation mdlc
VPW interface
B635
B744
B744 transistor
b746
MC68HC05 Applications Guide
mcr 100a
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a63a
Abstract: rtc 0.0504 an9702 A654 transistor A654 68HC05 CDP6818 CDP68HC05 CDP68HC05C8B CDP68HC68T1
Text: Keeping Time with the Intersil CDP68HC68T1 Real Time Clock and the “Millennium Bug” Application Note Introduction The Intersil CDP68HC68T1 is a multifunctional CMOS real time clock with 32 bytes of general purpose RAM and various power sense and watchdog control circuitry. The main
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CDP68HC68T1
CDP68HC68T1
68HC05
a63a
rtc 0.0504
an9702
A654
transistor A654
CDP6818
CDP68HC05
CDP68HC05C8B
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Untitled
Abstract: No abstract text available
Text: KEMET Part Number: R74LF2180AA00J 74LF2180AA00J Capacitor, film, 0.018 uF, +/-5% Tol, -55/+105C, General Purpose, 630V@85C, Lead Spacing=10 mm L General Information T Manufacturer: Brand: H F Miscellaneous Electrical: Arcotronics Not for new design. Use series
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R74LF2180AA00J
74LF2180AA00J)
F461-F464
250VAC
300v/us
80000V
b75dfaeb-cf26-4149-a808-126f58407238
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b745 diode
Abstract: sae j2178 STANDARD B744 B744 transistor CRC calculation mdlc sae 1010 130d sae j2178 part 1 B744(A)T b746
Text: Freescale Semiconductor Order this document by AN1224/D AN1224 Example Software Routines for the Message Data Link Controller Module on the MC68HC705V8 Freescale Semiconductor, Inc. By Chuck Powers Multiplex Applications INTRODUCTION The message data link controller MDLC module is a serial multiplex communication module designed to
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AN1224/D
AN1224
MC68HC705V8
J1850-Class
b745 diode
sae j2178 STANDARD
B744
B744 transistor
CRC calculation mdlc
sae 1010
130d
sae j2178 part 1
B744(A)T
b746
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B75D
Abstract: No abstract text available
Text: 2 4 5 7 6 REVISIONS I5S ZONE DE5CRIPTI0N\PER REQUEST\DATE F F RECOMMENDED MOUNTING HOLE E E D D - 2.3 C C NOTES: FINI5H PLATING THICKNESS IN MICRO-INCHE5 1, BRASS PER G G -B-626 2, BRASS PER G G -B-513 3, NICKEL PL. 100 MIN. THICK OVER COPPER STRIKE 4 , PHOSPHOR BRONZE PER GG -B-75D
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-B-626
-B-513
-B-75D
B7310-7
--12D
3G--75
10-11-01f
B7310-2-75
B75D
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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Untitled
Abstract: No abstract text available
Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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HY51V16100B
4b750flÃ
1AD43-00-MAY95
QQ04374
HY51V16100BJ
HY51V16100BSU
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B110D
Abstract: B105D B100D 4511 bd B10D
Text: REVISIONS REV. ECO. NO DESCRIPTION DATE BY C 985 REDRAW/REVISE. ALL AVAILABLE MOUNTINGS ADDED 04/12/06 MNH D 1346 ADDED METRIC DIMENSIONS, TABULATED MATERIALS 06/29/07 ASK E 1810 ADD HB TERMINATION, UPDATE LAYOUT 9/25/2008 ASK PART NUMBER CODING B AA D_
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C10091
Settings\Andy\Desktop\PDM-WIP\C10091,
B110D
B105D
B100D
4511 bd
B10D
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A
speed-55/70/85/100ns
1DC01-11-MAY94
HY62256AP
HY62256ALP
HY62256ALLP
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HYM532214A
Abstract: No abstract text available
Text: HYM532214A E-Series •HYUNDAI 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532214A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 decoupling capacitors are mounted
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HYM532214A
32-bit
HY5117804B
HYM532214AE/ASLE/ATE/ASLTE
HYMS32214AEG/ASLEG/ATEG/ASLTEG
R0n62
XW137
W10161
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HYM540A200MG
Abstract: No abstract text available
Text: HYM540A200 M-Series HYUNDAI 2M X 40-bit CMOS DRAM MODULE DESCRIPTION The HYM540A200 is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor is mounted for each DRAM.
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HYM540A200
40-bit
HY514400A
HYM540A200M/LM
HYM540A200MG/LMG
GG03477
0D0347A
HYM540A200MG
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Untitled
Abstract: No abstract text available
Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116160
16-bit.
HY5116160
1AD11-10-MAY95
HY5116160JC
HY5116160SLJC
HY5116160TC
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d774
Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Text: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT
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27C5I2A
27C0I0
27C020
27C040
98C64
28I6A
27C64
27HC64
27HC64I
27HC642
d774
d778
b778
58C65
08CB
58c256
df4a
SIGNETICS 87C256
57C49B
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211CAS
Abstract: HY5117404B ceam A10C HY511 BATX19
Text: •HYUNDAI H Y 5 1 1 7 4 0 4 B S e r ie s 4M x 4-bit CMOS DRAM with Extended Data Out P R E L IM IN A R Y DESCRIPTION T h e H Y 5117 404 B is the new generation and fast dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4-bit. The H Y 5117 404 B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117404B
D45-00-MAY95
Mb75Gflfl
HY5117404BJ
HY5117404BLJ
HY5117404BAT
211CAS
ceam
A10C
HY511
BATX19
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168
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HYM5V72A224A
72-bit
HY51V4404B
HY51V18164B
HYM5V72A224ARG/ASLRG/ATRG/ASLTRG
17itance
DQ0-DQ71)
4b750flfl
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide
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HY5116100A
HY5116100A
4b750Ã
1AD19-10-MAY95
D004321
HY5116100AJ
HY5116100ASLJ
HY5116100AT
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Untitled
Abstract: No abstract text available
Text: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152
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HY57V16401
304x4bits,
66MHz
80MHz
100MHz
1SD01-00-MAY95
400mil
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Untitled
Abstract: No abstract text available
Text: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion
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HY29F400T/B
48-Pin
HY29F400
16-Bit)
G-90I
T-90I,
R-90I
G-90E,
T-90E,
R-90E
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116410A
HY5116410A
HY5116410Ato
performanc00
1AD24-10-MAY94
HY5116410AJ
HY5116410ASLJ
HY511641
HY5116410ASLT
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576
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HY57V16801
152x8bits,
1SD02-00-MAY95
4L750fifi
400mil
4b750flfi
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