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    HY51V18164B

    Abstract: HY51V18164
    Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy


    Original     		PDF HYM5V64124A 1Mx64-bit 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG DQ0-DQ63) 1CE16-10-APR96 144pin HY51V18164

    HY51V18164B

    Abstract: hy51v18 HY51V16164B
    Text: HY51V18164B,HY51V16164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164B HY51V16164B 1Mx16, 16-bit 1Mx16 hy51v18 HY51V16164B

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B HYM5V64124ARG/ATRG/ASLRG/ASLTRG DQ0-DQ63) 62K1S 0157MOO)

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


    OCR Scan     		PDF HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 70Capacitance DQ0-DQ63) 1CE16-10-APR96

    HY51V18164B

    Abstract: HY51V18164
    Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		PDF HY51V18164B, HY51V16164B 16bit HY51V18164BJC HY51V18164BSLJC HY51V18164BTC HY51V18164BSLTC HY51V16164BJC HY51V16164BSLJC HY51V16164BTC HY51V18164B HY51V18164

    d947

    Abstract: hy51v18164b
    Text: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168


    OCR Scan     		PDF 72-bit HYM5V72A124A HY51V4404B HY51V18164B 2048bit HYM5V72A124ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1ECM-10-APR96 d947

    hy51v18164b

    Abstract: No abstract text available
    Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HYM5V64124Ais HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1CE16-10-APR96 HYM5V64124AQG HYM5V64124ASLQG

    hy51v18164b

    Abstract: No abstract text available
    Text: "H YU N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A224A 72-bit HY51V4404B HY51V18164B HYM5V72A224ARG/ASLRG/ATRG/ASLTRG 1EC07-10-JUNS6

    5v RAS 0610

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO m ode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B TheHYM5V64124ARG/ATRG/ASLRG/ASLTFiG DQ0-DQ63) 06-10-APR95 1EC06-10-MAR96 5v RAS 0610

    RAS 0610

    Abstract: ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164 hy51v18164b
    Text: »HYUNDAI HYM5V72A124A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A124A 72-bit HY51V4404B HY51V18164B 2048bit HYM5V72A124ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1EC06-10-APR95 RAS 0610 ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A X-Series 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42pin SOJ or 44/50pin TSOP-II, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B 42/42pin 44/50pin 16-bit YM5V64124AXG/ASLXG/ATXG/ASLTXG DQ0-DQ63)

    hy51v18164b

    Abstract: No abstract text available
    Text: "HYUNDAI HYM5V32124A X-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM5V32124A i s a l M x 32-bit E D O mode C M O S DRAM module consisting of two HY51V18164B in 44/50 pin TSO PII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is


    OCR Scan     		PDF HYM5V32124A 32-bit HY51V18164B 22jiF HYM5V32124ATXG/ASLTXG DQ0-DQ31) 1DC01-10-SEP95

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220

    hy51v18164b

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V32224A X-Series 2M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM5V32224A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		PDF HYM5V32224A 32-bit HY51V18164B HYM5V32224ATXG/ASLTXG DQ0-DQ63) 1DD01-10-SEP95 Q394/-0

    HY51V18164

    Abstract: No abstract text available
    Text: • ' M Y U H D A I — • H Y M 5 V 6 4 1 2 4 A Q - S e r ie s SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin S O J or 44/50 pin TSO PII and one 2048 bit EEPRO M on a 144 Zig Zag Dual pin glass-epoxy


    OCR Scan     		PDF 1Mx64-bit HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1Mx64-blt HYM5V64124AQG HYM5V64124ASLQG HYM6V64124ATQG HYM5VS4124ASLTQG HY51V18164

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		PDF 1Mx16, 16-bit 1Mx16

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    LTRG

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and


    OCR Scan     		PDF HYM5V64224A 64-bit HY5V18164B 2048bit HYM5V64224ARG/LRG/TRG/LTRG Single24A 1EC07-10-JUN96 LTRG

    HY51V181648

    Abstract: No abstract text available
    Text: ‘ HYUNDAI HYM5V64224A X-Series 2M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V181648 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF


    OCR Scan     		PDF HYM5V64224A 64-bit HY51V181648 16-bit HYM5V64224AXG/ASLXG/ATXG/ASLTXG 1ED01-10-AUG95 DQ0-DQ63)

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ