a10u
Abstract: B724e
Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
a10u
B724e
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
Pfl140/1
b7E4240
b7242L
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MSM5117800
Abstract: TSOP28-P-400
Text: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.
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MSM5117800
152-Word
MSM5117800
cycles/32ms
A0-A10
b724240
TSOP28-P-400
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msc23136c
Abstract: DS1060 MSC23136
Text: O K I Semiconductor MSC2 3 1 3 6 C/CL-XXBS1 0 /P S 10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-w ord x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in SOJ
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MSC23136C/CL-XXBS10/DS10
576-Word
36-Bit
MSC23136C/CL-xxBS10/DS10
72-pin
MSC23136C/CL-xxBS10:
msc23136c
DS1060
MSC23136
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process
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MSM514900/SL
288-Word
514900/SL
MSM514900/SL
cycles/16ms,
1024cycles/128ms
L72MEMD
Q015flbb
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514100A
Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
Text: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.
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MSM514100
304-Word
MSM514100A/AL
1024cycles/16ms,
1024cycles/128ms
A0-A10
514100A
20-PIN
26-PIN
ZIP20-P-400-W1
AOA10
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