MSM511000
Abstract: MSM514400 MSM548263
Text: ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Fast Access Operation for DRAMs ■ INTRODUCTION Increased processor speeds and high resolution graphics have placed added performance demands on the
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130ns
1-800-OKI-6388
MSM511000
MSM514400
MSM548263
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AA 170 circit diagram
Abstract: 256KX16 MSM5416256 ucas zip
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY
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MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
b72M2M0
b7S424D
AA 170 circit diagram
MSM5416256 ucas zip
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256kx16 ucas zip
Abstract: No abstract text available
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance
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MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
245MG
256kx16 ucas zip
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MSM5416256
Abstract: No abstract text available
Text: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption
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144-Word
16-Bit
MSM5416258A
40-pin
MSM5416256
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