diode RN 1220
Abstract: NDT455N diode 561
Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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NDT455N
OT-223
LSD113D
00401EÃ
diode RN 1220
NDT455N
diode 561
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2N6427
Abstract: MMBT6427 MPSA14
Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from
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2N6427
MMBT6427
OT-23
MPSA14
bSG113D
2N6427
MMBT6427
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2NS087
Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.
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2N5086
2N5087
MMBT5086
MMBT5087
OT-23
b501130
bSD113D
2NS087
2N5087 NATIONAL SEMICONDUCTOR
2NS086
2N5087
MMBT5087
T092
0013581
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DM3000
Abstract: NDM3000 SOIC-16 spindle motor control q406
Text: Nationa l f i Semiconductor May 1996 " N D M 3000 3 Phase Brush less M otor Driver G en eral D escription Features The NDM3000 three phase brushless m otor driver consists o f three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using National's proprietary,
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NDM3000
NDM3000
b50113G
DM3000
SOIC-16
spindle motor control
q406
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transistor t04 76
Abstract: GV 475 diode transistor T04 NDB6060 004027S
Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP6060/NDB6060
025ft
b50113G
0DMQ27H
bS01130
004027S
transistor t04 76
GV 475 diode
transistor T04
NDB6060
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56 pF CH
Abstract: NDS8858H cft 455 f
Text: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very
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NDS8858H
LSD113Ã
56 pF CH
NDS8858H
cft 455 f
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SOT23 B2X
Abstract: BZX84-C27 BZXB4 b2x84 bzx84c BZX84C10 bzx84c18 BZX84C33 BZX84-C BZX84C33-V
Text: 4V7 - BZX84C 33 Series BZX84C e? Discrete POWER & Signal Technologies National Semiconductor' BZX84C 4V7 - BZX84C 33 Series Zeners Tolerance: C = 5% Absolute Maximum Ratings* T A = 25°C unless otherwise noted Parameter Value Units + 150 °c °c Total Device Dissipation
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BZX84C
BZX84C
OT-23
bS01130
SOT23 B2X
BZX84-C27
BZXB4
b2x84
BZX84C10
bzx84c18
BZX84C33
BZX84-C
BZX84C33-V
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6c2 diode
Abstract: NDH8436
Text: e i Na t i o n a l Semiconductor" May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH8436
bS01130
6c2 diode
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