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    NDB6060 Search Results

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    NDB6060 Price and Stock

    onsemi NDB6060

    MOSFET N-CH 60V 48A D2PAK
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    DigiKey NDB6060 Cut Tape 1
    • 1 $2.62
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    NDB6060 Reel 800
    • 1 -
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    • 1000 $0.88115
    • 10000 $0.75625
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    onsemi NDB6060L

    MOSFET N-CH 60V 48A D2PAK
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    DigiKey NDB6060L Digi-Reel 1
    • 1 $3.34
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    NDB6060L Reel 800
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    • 1000 $1.16523
    • 10000 $1.0515
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    NDB6060L Cut Tape 1
    • 1 $3.34
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    Newark NDB6060L Reel 800
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    NDB6060L Cut Tape 5
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    Bristol Electronics NDB6060L 1,468
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    National Semiconductor Corporation NDB6060

    MOSFET Transistor, N-Channel, TO-263AB
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    Quest Components NDB6060 359
    • 1 $2.8
    • 10 $2.8
    • 100 $1.4
    • 1000 $1.295
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    Fairchild Semiconductor Corporation NDB6060L

    MOSFET Transistor, N-Channel, TO-263AB
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    Quest Components NDB6060L 12
    • 1 $3.75
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    NDB6060 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDB6060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB6060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB6060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB6060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB6060L_NL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    NDB6060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L

    zener diode 3.0 b2

    Abstract: F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L zener diode 3.0 b2 F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L

    NDB6060

    Abstract: NDP6060 zener diode 11 b1
    Text: N March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially


    Original     		PDF NDP6060 NDB6060 NDB6060 zener diode 11 b1

    A24100

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L NDP6060
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060 A24100 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L

    zener diode 3.0 b2

    Abstract: 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060 zener diode 3.0 b2 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L

    ndp6060l

    Abstract: NDB6060L
    Text: N April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6060L NDB6060L NDB6060L

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


    Original     		PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    NDB6060

    Abstract: NDP6060
    Text: M a rc h 1 9 9 6 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060 NDB6060 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using


    OCR Scan     		PDF NDP6060L NDB6060L

    transistor t04 76

    Abstract: GV 475 diode transistor T04 NDB6060 004027S
    Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: April 1996 N NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP6060L NDB6060L 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are p ro d u c e d using N a tio n a l's p ro p rie ta ry , hig h cell d e n s ity , D M O S te c h n o lo g y .


    OCR Scan     		PDF NDP6060 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: M M a rc h 1996 National Semiconductorm NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escriptio n Features These N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld • 4 8A , 60V. RDSI0N = 0 .0 2 5Q @ VGS= 10V. e ffect tra n s is to rs are p ro d u c e d u sing N a tio n a l's


    OCR Scan     		PDF NDP6060 NDB6060

    NDP6060L

    Abstract: NDB6060L
    Text: gC M National Semiconductor A p ril 19 96 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP6060L/ NDB6060L bS0ii30 0040EÃ NDP6060L NDB6060L

    Untitled

    Abstract: No abstract text available
    Text: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060 NDB6060 NDB6060

    N55C

    Abstract: NDB6060 NDB6060L NDP6060L
    Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g


    OCR Scan     		PDF NDP6060L NDB6060L NDP6060LRev. NDB6060LRev. 34bTb74 N55C NDB6060 NDB6060L

    sith

    Abstract: NDP6060L
    Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF P6060L 6060L NDP6060L NDB6060L sith