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    onsemi NDH8436

    MOSFET N-CH 30V 5.8A SUPERSOT8
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    DigiKey NDH8436 Reel 3,000
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    NDH8436 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDH8436 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8436 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8436 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDH8436 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDH8436 National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDH8436 Datasheets Context Search

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    NDH8436

    Abstract: No abstract text available
    Text: N May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDH8436 NDH8436

    sot8

    Abstract: NDH8436
    Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDH8436 NDH8436 sot8

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    Untitled

    Abstract: No abstract text available
    Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect - transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDH8436 NDH8436

    sot8

    Abstract: NDH8436 sot-8
    Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription These N -C h a n n e l Features enhancem ent m ode pow er field effect - density, D M O S tech nology. T h is v e ry high density process is esp ecially tailored to


    OCR Scan     		PDF NDH8436 NDH8436 sot8 sot-8

    6c2 diode

    Abstract: NDH8436
    Text: e i Na t i o n a l Semiconductor" May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH8436 bS01130 6c2 diode

    IC-255

    Abstract: 1Ft SOT-363-6
    Text: P A IR C H IL D March 1996 S E M IC O N D U C T O R tm NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDH8436 IC-255 1Ft SOT-363-6

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N