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    transistor t04 76

    Abstract: GV 475 diode transistor T04 NDB6060 004027S
    Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060