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    AS4LC25 Search Results

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    AS4LC25 Price and Stock

    ALLIANCE (Alliance Memory Inc) AS4LC256K16E0-60JC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics AS4LC256K16E0-60JC 308 1
    • 1 $13.5
    • 10 $10.125
    • 100 $7.7625
    • 1000 $7.7625
    • 10000 $7.7625
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    Alliance Memory Inc AS4LC256K16E0-60JC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components AS4LC256K16E0-60JC 246
    • 1 $18
    • 10 $18
    • 100 $10.8
    • 1000 $10.35
    • 10000 $10.35
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    not specified AS4LC256K16EO45TE

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    ComSIT USA AS4LC256K16EO45TE
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    Others AS4LC256K16E050JC

    INSTOCK
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    Chip 1 Exchange AS4LC256K16E050JC 107
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    AS4LC25 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS4LC256K16E0 Alliance Semiconductor 5V / 3.3V EDO DRAM, 4M, 256K x 16 Original PDF
    AS4LC256K16E0-35JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time Original PDF
    AS4LC256K16E0-35JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16E0-35TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time Original PDF
    AS4LC256K16E0-35TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16E0-45JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time Original PDF
    AS4LC256K16E0-45JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16E0-45TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time Original PDF
    AS4LC256K16E0-45TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16E0-50JC Alliance Semiconductor 5V / 3.3V Edo DRAM 4M 256K x 16 Original PDF
    AS4LC256K16E0-60JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time Original PDF
    AS4LC256K16E0-60JC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16E0-60TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time Original PDF
    AS4LC256K16E0-60TC Alliance Semiconductor 3.3V 256K x 16 CM0S DRAM Scan PDF
    AS4LC256K16EO Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF
    AS4LC256K16EO-35 Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF
    AS4LC256K16EO-35TC Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF
    AS4LC256K16EO-45JC Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF
    AS4LC256K16EO-45TC Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF
    AS4LC256K16EO-45TC Alliance Semiconductor 3.3V 256K x 16 CMOS DRAM (EDO) Original PDF

    AS4LC25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (AS4LC256K16E0-35)


    Original     		PDF AS4LC256K16E0-35) 40-pin 40/44-pin I/O15 AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E0-45JC

    AS4LC256K16EO

    Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time


    Original     		PDF AS4LC256K16EO AS4LC256K16EO-35) AS4LC256K16EO35) 40-pin 40/44-pin I/O15 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16EO AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28

    AS4LC256K16EO

    Abstract: No abstract text available
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time


    Original     		PDF AS4LC256K16EO 40-pin AS4LC256K16EO-45) 40/44-pin I/O15 40-pin AS4LC256K16E0-45JC AS4LC256K16E0-50JC AS4LC256K16EO

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time


    Original     		PDF AS4LC256K16EO AS4LC256K16EO-35) AS4LC256K16EO35) 40-pin 40/44-pin I/O15 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		PDF Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620

    Untitled

    Abstract: No abstract text available
    Text:  $6/&.6 9.ð&026V\QFKURQRXVJUDSKLF5$0 HDWXUHV • Organization - 131,072 words x 32 bits × 2 banks • Fully synchronous - All signals referenced to positive edge of clock • Internal pipeline operation - Column address can be changed every clock cycle


    Original     		PDF AS4LC256K32S0 100-pin, AS4LC256K32S0-150PQ AS4LC256K32S0-133PQ AS4LC256K32S0-100PQ

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K32S0 A 3.3V 256K x32 CMOS synchronous graphic RAM Features • Organization - 131,072 w ords x 32 bits x 2 banks • Rally synchronous - All signals referenced to positive edge o f clock • Internal pipeline operation - Column address can be changed every clock cycle


    OCR Scan     		PDF AS4LC256K32S0 100-pin, AS4LC256K32S0-150FQ AS4LC256K32S0-133PQ AS1LC256K32S0-100FQ

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e


    OCR Scan     		PDF AS4LC256K16E0 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 40/44-pin AS4LC256K16E0-35TC

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K32S0 3.3V 256Kx32 CMOS ronous grapnic RAM Features • O rganization - 1 3 1 ,0 7 2 w o i d s x 32 b i s x 2 b a n k s • Fully s /n c h ro n o u s - A llsig n a ls referenced to p o sitiv e e d g e o f clock • In te m a lp ip e lin e o p eratio n


    OCR Scan     		PDF AS4LC256K32S0 256Kx32 32S0-150PQ 32S0-133PQ S4IC256K 32S0-100PQ

    Untitled

    Abstract: No abstract text available
    Text: H igh p e rfo rm an c e 256KX32 CMOS SGRAM gg AS4LC256K32S0 II 8 Megabit CMOS synchronous graphic RAM Features • Burst read, single w rite operation • LVTTL compatible 1/O •3 .3 V pow er supply • JEDEC standard package, pinout and function - 10 0 -p in PQFP an d TQFP


    OCR Scan     		PDF 256KX32 AS4LC256K32S0 32S0-133Q 32S0-100Q 32S0-133TQ 00TQC 1-60002-A.

    AS4LC256K32S0-150QC

    Abstract: dox5
    Text: H igh p erform ance 256K X 32 CMOS SGRAM gg II AS4LC256K32S0 8 M egabit CM OS synchronous graphic RAM Features • • • • • O rganization - 1 3 1 ,0 7 2 w o rd s x 3 2 bits x 2 banks • Fully synchronous - All signals referen c e d to p o sitiv e ed g e o f clock


    OCR Scan     		PDF AS4LC256K32S0 256KX32 100-pin 100-pin, -150QC AS4LC256K32S0-1 2S0-100 AS4LC256K32S0-133TQC AS4LC25 AS4LC256K32S0-150QC dox5

    AS4LC256K32S0-100TQC

    Abstract: No abstract text available
    Text: AS4LC256K32S0 I l 3.3V 256Kx32 CMOS synchronous graphic RAM Organization Burst read, single w rite operation - 131,072 w ords x 32 bits x 2 banks LVTTL com patible 1/0 Fu lly synchronous 3.3V pow er supply - A ll signals referenced to positive edge of clock


    OCR Scan     		PDF AS4LC256K32S0 256Kx32 100-pin 100-pin, AS4LC256K32S0-150QC AS4LC256K32S0-133QC AS4LC256K32S0-100QC AS4LC256K32S0-150TQC 56K32S0-133TQC AS4LC256K32S0-100TQC

    sem 2105 16 pin

    Abstract: sem 2105 AS4LC256K16E0
    Text: I’relim inan in ['orinal ion •■ AS4LC256K16K0 II 3.3V 2 5 6 K x l6 CMOS DRAM EDO c a tu r e s O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits H ig h speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 /2 0 / 2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e


    OCR Scan     		PDF AS4LC256K16K0 256Kxl6 AS4LC256K16E0-35) 40-pin 40/44-pin AS4LC256K16E0-35JC 6K16E0-4 AS4LC256K16E0-60JC sem 2105 16 pin sem 2105 AS4LC256K16E0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4LC256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e


    OCR Scan     		PDF AS4LC256K16E0 256KX16 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC AS4LC256K16E0-35TC AS4LC256K16E0-45TC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e


    OCR Scan     		PDF AS4LC256K16E0-35) AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC AS4LC256K16E0-35TC AS4LC256K16E0-45TC AS4LC256K16E0-60TC 256K16E0

    AS4C256K16F0-60JC

    Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
    Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization


    OCR Scan     		PDF AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3

    Untitled

    Abstract: No abstract text available
    Text: Features • Organization Automatic and direct precharge Burst read, single write operation - 131,072 words x 64 bits x 2 banks • Fully synchronous Can assert random column address in every cycle - All signals referenced to positive edge of clock LVTTL compatible I/O


    OCR Scan     		PDF 128-pin AS4LC256K64S0-133QC 256K64S0-100QC AS4LC256K64S0

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		PDF AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


    OCR Scan     		PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM

    SM3C

    Abstract: AS4LC256K32S0-150QC AS4LC256K32S0-100QC Cab1
    Text: A S4LC 25 6K 32 S0 I 3.3V 2 5 6 K x 3 2 C M O S synchronous graphic RAM Features • Organization - 131,072 w ords x 32 bits x 2 banks • Fully synchronous - All signals referenced to positive edge of clock • Internal pipeline operation - Column address can be changed every clock cycle


    OCR Scan     		PDF AS4LC256K32S0 256KX32 100-pin 100-pin, AS4LC256K32S0-150QC AS4LC256K32S0-133QC AS4LC256K32S0-100QC 56K32S0-150TQC AS4LC256K32S0-133TQC SM3C AS4LC256K32S0-150QC Cab1

    Untitled

    Abstract: No abstract text available
    Text: H in li Ih ! i H S i’ K A • \ 1( > ■{ ! H J.lliji i v il)'- S't Ni ii.OIWiJ-, u iu liiii: i! i \ \ Features • B urst re a d , sin g le w r ite o p e ra tio n • LVTTL c o m p a tib le I / O • O rg a n iz a tio n - 131,072 w o rd s x 32 bits x 2 banks


    OCR Scan     		PDF 100-pin, AS4LC2S6K32S0-1S0QC AS4LC256K32S0-150TQC AS4LC256K32S0-133QC AS4LC2S6K32S0-133TQC AS4LC2S6K32S0-1OOTQC 1-60002-A.

    6k16e

    Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
    Text: Preliminary information •■ A S4LC256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite


    OCR Scan     		PDF AS4LC256K16E0 256KX16 AS4LC256K16E0-35) 40-pin 40/44-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 6k16e TEA II04 AS4LC256K16E0 AS4LC256K16E0-35JC