MX* 64M-Bit eprom
Abstract: A0-A21 Q0-Q15
Text: BRIEF MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)
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MX28F640W30T/B
64M-BIT
32Kword
128-bit
64-bit
DEC/09/2002
MX* 64M-Bit eprom
A0-A21
Q0-Q15
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TC58FVM6B5BTG65
Abstract: TC58FVM6B5BTG EN29PL064
Text: Eon Silicon Solution Inc. Page 1/1 Difference Comparison Table: VDD VID Simultaneous Read/Write Pin to Pin Page read Secure sector FlexBank Architecture TC58FVM6B5BTG65 EN29PL064 Yes Yes Yes 8-words 32kwords Yes 4-words 64 words 2.7 - 3.6V 8.5 - 12.6V 2.7 - 3.6V
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TC58FVM6B5BTG65
EN29PL064
32kwords
32-word
48-pin
TC58FVM6B5BTG65
TC58FVM6B5BTG
EN29PL064
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mxic
Abstract: MX* 64M-Bit eprom 8088 microprocessor pin description A0-A21 Q0-Q15 64-mega
Text: BRIEF MX28F640W18T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)
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MX28F640W18T/B
64M-BIT
32Kword
128-bit
64-bit
DEC/09/
mxic
MX* 64M-Bit eprom
8088 microprocessor pin description
A0-A21
Q0-Q15
64-mega
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46-17000
Abstract: A0-A21 Q0-Q15
Text: ADVANCED INFORMATION MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)
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MX28F640W30T/B
64M-BIT
32Kword
128-bit
64-bit
PM0963
46-17000
A0-A21
Q0-Q15
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A0-A21
Abstract: Q0-Q15
Text: ADVANCED INFORMATION MX28F640W18T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)
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MX28F640W18T/B
64M-BIT
32Kword
128-bit
64-bit
APR/17/2002
OCT/17/2002
NOV/07/2002
PM0883
A0-A21
Q0-Q15
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multibus ARCHITECTURE
Abstract: mcbsp tms 6000
Text: TMS320VC5416 FIXED-POINT DIGITAL SIGNAL PROCESSOR SPRS095B – MARCH 1999 – REVISED OCTOBER 1999 D D D D D D D D D D D D D Advanced Multibus Architecture With Three Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU
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TMS320VC5416
SPRS095B
16-Bit
40-Bit
17-Bit
multibus ARCHITECTURE
mcbsp tms 6000
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S-PQFP-G144 footprint
Abstract: No abstract text available
Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139 November 2000 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to
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TMS320VC5410A
SPRS139
S-PQFP-G144 footprint
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Untitled
Abstract: No abstract text available
Text: TMS320VC5416 FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS095E – MARCH 1999 – REVISED MAY 2000 D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU Including a 40-Bit Barrel Shifter and Two
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TMS320VC5416
SPRS095E
16-Bit
40-Bit
17-Bit
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ifr 422 H7
Abstract: ifr 422 h6 49 4h10 remote TMS320C54xTM
Text: TMS320VC5441 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS122A December 1999 – Revised November 2000 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to
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TMS320VC5441
SPRS122A
SPRS122A
S-PQFP-G176)
MS-026
176-Pin
ifr 422 H7
ifr 422 h6 49
4h10 remote
TMS320C54xTM
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TMS320LC546A
Abstract: No abstract text available
Text: HEADER LINE 1 FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU
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SPRS039C
16-Bit
40-Bit
17-Bit
TMS320LC546A
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TMS320VC541
Abstract: No abstract text available
Text: SM320VC5416-EP Fixed-Point Digital Signal Processor Data Manual Literature Number: SGUS048 July 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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SM320VC5416-EP
SGUS048
MTQF017A
S-PQFP-G144)
MS-026
TMS320VC541
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Untitled
Abstract: No abstract text available
Text: TMS320VC5441 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS122E December 1999 – Revised April 2002 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320VC5441
SPRS122E
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Untitled
Abstract: No abstract text available
Text: TMS320VC5409A Fixed-PointDigital Signal Processor Data Manual Literature Number: SPRS140F November 2000 – Revised January 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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TMS320VC5409A
SPRS140F
TMS320VC5409A
SPRS140F
SPRS140E
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Untitled
Abstract: No abstract text available
Text: FEDL610Q793-01 Issue Date: 6/12/2013 ML610Q793 8-bit Microcontroller for Sensor Control • General Description The ML610Q793 is a high-performance 8-bit low power microcontroller optimized for sensor hub, that integrates LAPIS Semiconductor’s original high-performance 8-bit CPU core with a 16-bit multiplier/divider co-processor, 64 kByte flash
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FEDL610Q793-01
ML610Q793
ML610Q793
16-bit
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mc 6871 a
Abstract: No abstract text available
Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139F November 2000 – Revised May 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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TMS320VC5410A
SPRS139F
TMS320VC5410A
SPRS139F
SPRS139E
mc 6871 a
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app abstract
Abstract: No abstract text available
Text: TMS320VC5407/TMS320VC5404 Fixed-Point Digital Signal Processors Data Manual Literature Number: SPRS007B November 2001 – Revised July 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320VC5407/TMS320VC5404
SPRS007B
TMS320C54x
TMS320C55x
TMS320C5000
SPRC099
SPRC133
SPRC132
SPRC115
app abstract
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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1822-HEX
Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with
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HM71V832
32768-word
32k-word
HM71V832-15
HM71V832FP
FP-28DA)
HM71V832T
TFP-28DB)
1822-HEX
HM71V832FP-15
HM71V832T-15
"Ferroelectric RAM"
Hitachi 32k static RAM
Hitachi DSA00198
Hitachi DSA00198182
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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29LVS00
Abstract: 29LV800 AS29 AS29LV800 LI400
Text: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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8/512Kx
AS29LV800
1Mx8/512Kx16
64Kbyte
32Kword
AS29IV800T80SE
AS29D/800T-100SC
AS29D/800T-100SI
AS29LV800T-120SC
AS29LV800T-120SI
29LVS00
29LV800
AS29
AS29LV800
LI400
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/20SC
AS29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
44-pin
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS29LL800 A 2.2V !Mx8/512Kxl6 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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AS29LL800
Mx8/512Kxl6
8/512K
64Kbyte
32Kword
write/LL800T150SC
AS29LL800T150SI
AS29LL800T200SC
AS29LL800T200SI
44-pin
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS29SL800 A 1.8V ! M x 8 / 5 1 2 K x l 6 CMOS Flash EEPROM Features • Organization: 1Mx 8 /5 1 2 K x 16 • Sector architecture • • • • • Law power consumption One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors One 8K; two 4K; one 16K; and fifteen 32Kword sectors
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AS29SL800
64Kbyte
32Kword
48-pin
44-pin
AS29SL800T-200SC
AS29SL800T-200SI
44-pin
AS29SL800B-100SC
AS29SL800B-100SI
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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