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    Dow Corning 6811

    Abstract: 78 L033 TDR-90 sr61 hv25 k2 1 HV49 l033 sr61 tot transistor SR62 HV10
    Text: HV512 HV512 64-Channel Serial To Parallel Converter With Temperature Sense and High Voltage Push-Pull Outputs Ordering Information Package Option Device Micro-BGA Die HV512 HV512GA HV512X Features General Description ❏ High voltage HVCMOS output ❏ Output voltages from 0V to 50V-200V


    Original     		PDF HV512 64-Channel HV512GA HV512X 0V-200V HV512 25MHz Dow Corning 6811 78 L033 TDR-90 sr61 hv25 k2 1 HV49 l033 sr61 tot transistor SR62 HV10

    TDR-90

    Abstract: Dow Corning 6811 L049 hv32 k2 1 Dow Corning 6910 sr61 tot HV10 HV12 HV14 HV15
    Text: HV512 HV512 64-Channel Serial To Parallel Converter With Temperature Sense and High Voltage Push-Pull Outputs Ordering Information Package Option Device Micro-BGA Die HV512 HV512GA HV512X Features General Description ❏ High voltage HVCMOS output ❏ Output voltages from 0V to 50V-200V


    Original     		PDF HV512 64-Channel HV512GA HV512X 0V-200V HV512 25MHz TDR-90 Dow Corning 6811 L049 hv32 k2 1 Dow Corning 6910 sr61 tot HV10 HV12 HV14 HV15

    la 76805 volt on pin

    Abstract: la 76805 DSP56800E DSP56853 DSP56854 DSP56855 DSP56857 DSP56858 BC2214 fira 8748
    Text: Order this document by DSP5685XUM/D Rev. 2.0, 03/2002 DSP56853/854/855/857/858 16-Bit Digital Signal Processor User’s Manual 12 13 14 15 16 17 18 DSP56853/854/855/857/858 User’s Manual Preliminary This manual is one of a set of three documents. For complete product information, it is necessary


    Original     		PDF DSP5685XUM/D DSP56853/854/855/857/858 16-Bit DSP56853/854/855/857/858 DSP5685x DSP5685xUser DSP56F85xUM/D la 76805 volt on pin la 76805 DSP56800E DSP56853 DSP56854 DSP56855 DSP56857 DSP56858 BC2214 fira 8748

    fira 8748

    Abstract: 612245 At25xxx DSP56800E DSP56853 DSP56854 DSP56855 DSP56857 DSP56858 atmel 518
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP5685X User Manual Rev 3.0 5685x 12 Digital Signal Processor 13 14 15 16 17 MOTOROLA.COM/SEMICONDUCTORS 18 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF DSP5685X 5685x DSP5685x DSP5685xUser DSP56F85xUM/D DSP56F85XUMAD/D DSP56835XUM/D fira 8748 612245 At25xxx DSP56800E DSP56853 DSP56854 DSP56855 DSP56857 DSP56858 atmel 518

    56800E

    Abstract: DSP56800E DSP5685XUM 56800e OCMDR fira 8748 freescale superflash
    Text: 5685X User Manual 5685X Digitial Signal Controller 12 13 14 15 16 DSP5685XUM Rev. 4 07/2005 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary to have all three documents. They are: DSP56800E Reference Manual, DSP5685X User Manual, and


    Original     		PDF 5685X DSP5685XUM DSP56800E DSP5685X DSP56F85XUM 5685X 56800E DSP5685XUM 56800e OCMDR fira 8748 freescale superflash

    BC358* CSR

    Abstract: BC358239A CSR BlueCore 5 Multimedia BC358 CSR BLUECORE VIRTUAL MACHINE BlueCore RSSI, Link Quality and Out of Range Indication BLUECORE3 schematic diagram of bluetooth headphone CSR BlueCore 5 DSP MIPS CSR USB SPI converter
    Text: _äìÉ`çêÉ»PJjìäíáãÉÇá~ Device Features Single Chip Bluetooth System ƒ Fully Qualified Bluetooth system ƒ Bluetooth v1.2 Specification Compliant Advance Information Datasheet For ƒ DSP Open Platform Co-Processor ƒ Full Speed Bluetooth Operation with Full Piconet


    Original     		PDF BC358239A 96-ball 16-bit BC358239A -ds-001Pb BC358239A-ds-001Pa) BC358239A-ds-001Pb BC358* CSR CSR BlueCore 5 Multimedia BC358 CSR BLUECORE VIRTUAL MACHINE BlueCore RSSI, Link Quality and Out of Range Indication BLUECORE3 schematic diagram of bluetooth headphone CSR BlueCore 5 DSP MIPS CSR USB SPI converter

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF 14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT

    514404

    Abstract: No abstract text available
    Text: “H Y U N D A I HY514404A Series 1M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells


    OCR Scan     		PDF HY514404A HY514404AJ HY5144CAS-before-/RAS 128ms 514404

    Untitled

    Abstract: No abstract text available
    Text: & Microchip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION High speed performance T h e Microchip Technology Inc. 2 7 H C 1 6 1 6 is a C M O S — 45ns Maximum access time 2 56K bit (ultraviolet light) Erasable (electrically) Pro­


    OCR Scan     		PDF 40-Pin 44-Pin 27HC1616 27HC1616 1616L 1010A

    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I H Y M 5 6 4 1 2 4 A R -S e r ie s Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION Tîie HYM564124A is a 1M x 64-bit EDO mode C M O S DRAM module consisting of four HV5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and


    OCR Scan     		PDF 64-bit HYM564124A HV5118164B HYM564124ARG/ATRG/ASLRG/ASLTRG DQ0-DQ63) 1CE16-10-APR95 75Dflfl 16-10-APR98

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64104A X-Series 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM5V64104A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HV51V16164B in 42/42pin SOJ or 44/50pin TSOP-II, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V64104A 64-bit HV51V16164B 42/42pin 44/50pin 16-bit HYM5V64104AXG/ASLXG/ATXG/ASLTXG DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ

    Untitled

    Abstract: No abstract text available
    Text: "H YU N D A I _ HYM572A404A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HV5116404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board 0.1|aF and O.OlnF


    OCR Scan     		PDF HYM572A404A 72-bit HV5116404A HYM572A404AKG/ATKG/ASLKG/ASLTKG 00D5643 1EC07-10-JAN96 HYM572A404AKG

    HY5DU641622AT-55

    Abstract: No abstract text available
    Text: 64M 4Mx16 DDR SDRAM HY5DU641622AT Revision 0.6 April 2001 This document is a general product description and is subject to change without notice. 35 HY5DU641622AT 64Mb(4Mx16) D ouble Data Rate SDRAM PRELIMINARY DESCRIPTION The Hynix HV5DU641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the


    OCR Scan     		PDF 4Mx16) HY5DU641622AT HV5DU641622 864-bit 4Mx16 64M-bit HY5DU641622AT-55

    71256L25

    Abstract: idt71256
    Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: • Optimized for fast RISC processors including the IDT79R3000 • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)


    OCR Scan     		PDF IDT71256S IDT71256L IDT79R3000 25/30/35/45/55/70/85/100/120/150ns 20/25/30/35/45ns 28-pin MIL-STD-883, 71256L25 idt71256

    Untitled

    Abstract: No abstract text available
    Text: HY57V281620HD L T 8Mx16-bit, 4KRef, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CM OS Synchronous DRAM, ideally suited fo r the main m em ory applications which require large m em ory density and high bandwidth. HY57V 281620HD(L)T is organized as 4banks o f 2,097,152x16


    OCR Scan     		PDF HY57V281620HD 8Mx16-bit, 728bit HY57V 281620HD 152x16

    SI HV5

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode


    OCR Scan     		PDF 16-BIT, 50-pin uPD4264165-A50 uPD4265165-A50 uPD4264165-A60 uPD4265165-A60 S50GS-80-7JF3 PD4264165, iPD4264165G5-7JF, 65165G SI HV5

    HYM53

    Abstract: HYM532410 simm 72 dram
    Text: •«HYUNDAI HYM532410A M-Series 4M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53241OA is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM532410A 32-bit HYM53241OA HY5117400A HYM53241OAM/ASLM/ATM/ASLTM HYM53241OAMG/ASLMG/ATMG/ASLTMG HYM532410A/AL HYM532410AT/ALT HYM53 HYM532410 simm 72 dram

    simm 72 dram

    Abstract: No abstract text available
    Text: - H Y U N D A I H Y M 5 3 2 8 1 0 A 8M X M - S e r ie s 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitor is mounted


    OCR Scan     		PDF 32-bit HYM532810A HY5117400A HYM53281OAM/ALM/ATM/ALTM HYM53281OAMG/ALMG/ATMG/ALTMG 1CF13-10-DEC94 HYM532810A/AL HYM532810AT/ALT simm 72 dram

    HY5118164

    Abstract: No abstract text available
    Text: ••HYUNDAI HYM564224A R-Senes Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and


    OCR Scan     		PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG DQ0-DQ63) 1CE16-10-APR95 HY5118164

    logic diagram and symbol of DRAM

    Abstract: No abstract text available
    Text: •HYUNDAI HY5117400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 HY5117400JC HY5117400UC HY5117400TC HY5117400LTC logic diagram and symbol of DRAM

    Untitled

    Abstract: No abstract text available
    Text: H YU N D A I HY51V16100A Series 16M X 1-blt CMOS ORAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A Vl6100Ato 1AD21-00-MAY94 HY51V16100AJ HY51V161OOASLJ HY51V16100AT HY51V161OOASLT

    DML D01

    Abstract: No abstract text available
    Text: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514810B HY51481 1AC19-00-MAY94 HY514810BJC HY514810BUC HY514810BSUC HY514810BTC DML D01

    T211T

    Abstract: nkl capacitor
    Text: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot


    OCR Scan     		PDF HY57V651620A HY57V651620A 864-bit 576x16. T10iT11 12T13 T17T18T19 T22fTZ. T211T nkl capacitor