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    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    T211T

    Abstract: nkl capacitor
    Text: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot


    OCR Scan     		PDF HY57V651620A HY57V651620A 864-bit 576x16. T10iT11 12T13 T17T18T19 T22fTZ. T211T nkl capacitor