HY57V651620A
Abstract: hy57v651620atc-10s HY57V651620ATC10P
Text: HY57V651620A 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620A is organized as 4banks of
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HY57V651620A
HY57V651620A
864-bit
576x16.
400mil
54pin
hy57v651620atc-10s
HY57V651620ATC10P
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HY57V651620A
Abstract: 54PIN HY57V651620ATC-10S
Text: HY57V651620A 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620A is organized as 4banks of
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HY57V651620A
HY57V651620A
864-bit
576x16.
1SE33-11-MAR98.
400mil
54pin
HY57V651620ATC-10S
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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hym7v65801a
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM Unbuffered DIMM R-Series PC/100 SDRAM Specification Supporting based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65831A DESCRIPTION The HYM7V65800A/ 65801A/ 65830A/ 65831A R-Series are high speed 3.3-Volt synchronous dynamic
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8Mx64
PC/100
4Mx16
HYM7V65800A/
HYM7V65801A/
HYM7V65830A/
HYM7V65831A
5801A/
5830A/
hym7v65801a
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KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
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hy57v641620
Abstract: No abstract text available
Text: 4Mx64 bit SDRAM Unbuffered DIMM R-Series PC/100 SDRAM Specification Supporting based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V65400A/ HYM7V65401A/ HYM7V65430A/ HYM7V65431A DESCRIPTION The HYM7V65400A/ 65401A/ 65430A/ 65431A R-Series are high speed 3.3-Volt synchronous dynamic
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4Mx64
PC/100
4Mx16
HYM7V65400A/
HYM7V65401A/
HYM7V65430A/
HYM7V65431A
5401A/
5430A/
hy57v641620
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Asus PC MOTHERBOARD CIRCUIT MANUAL
Abstract: cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5
Text: A Guide to Building a PC with an AMD Athlon Processor TM Publication # 22914 Issue Date: September 1999 Rev: B 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with
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22914B/0--September
Asus PC MOTHERBOARD CIRCUIT MANUAL
cwt 235 atx
FSP250-61gn
acer motherboard jumper settings
D4516821AG5
fsp300
Atx-1125b
ATX 235
KEYTRONIC
d4564163g5
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HYM7V65400
Abstract: HYM7V65401A
Text: 4Mx64 bit SDRAM Unbuffered DIMM R-Series PC/100 SDRAM Specification Supporting based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V65400A/ HYM7V65401A/ HYM7V65430A/ HYM7V65431A DESCRIPTION The HYM7V65400A/ 65401A/ 65430A/ 65431A R-Series are high speed 3.3-Volt synchronous dynamic
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4Mx64
PC/100
4Mx16
HYM7V65400A/
HYM7V65401A/
HYM7V65430A/
HYM7V65431A
5401A/
5430A/
HYM7V65400
HYM7V65401A
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gm72v661641ct7j
Abstract: motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF
Text: Microstar MSI Motherboard Memory Recommendations December 15, 1999 Microstar Motherboard Recommended Memory List (Revised 08-06-99) Manufacturer Model Number (IC Part Number) Type Size Fujitsu (BUFFALO) 81F16822D-102LFN (ECC) SDRAM 32MB LGS (Apacer) GM72V661641CTJ7
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81F16822D-102LFN
GM72V661641CTJ7
MT48LC4M16A2TG-8C
D4516821AG5-A10-7JF
KM48S2020CT-GH
TMS626812BDGE5H-8
TC59S1608AFT-10
HM5264165TTB60
HM5264805TTB60
gm72v661641ct7j
motherboard ic list
d4564163g5
D4516821AG5
TC59S1608AFT-10
v54c365804vbt8pc
GM72v66841ct7j
D4564841g5
GM72V66841CT-7J
D4564841G5-A10B-9JF
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KM48S8030BT-GL
Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
NT56V1680A0T
D4516821AG5
KM416S4030BT-GL
81f641642b103fn
KM48S2020CT-GL
D4516821AG5-A107JF
gm72v661641ct7j
TC59S6408BFT80
D4564163G5
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T211T
Abstract: nkl capacitor
Text: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot
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OCR Scan
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HY57V651620A
HY57V651620A
864-bit
576x16.
T10iT11
12T13
T17T18T19
T22fTZ.
T211T
nkl capacitor
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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OCR Scan
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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HY57V16161
Abstract: hy57v168010b 1MX16BIT 4MX16
Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram
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HY57V41610TC---------------------
256Kx16-bit,
16M-bit
HY57V16401O
--------HY57V168010BTC-------------------
-------------------------------HY57V16161
-------------------1Mx16-bit,
64M-bit
HY5DV654023TC--------------------
HY57V16161
hy57v168010b
1MX16BIT
4MX16
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CK3121
Abstract: No abstract text available
Text: •H YU N D A I - • 8MX64 BIT SDRAM UNBUFFERED DIMM R-SERIES ^ PC/100 SDRAM Specification Supporting '' ' based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V65800A/ HYM7V65801 A/ HYM7V65830A/ HYM7V6S831A DESCRIPTION The HYM7V65800A/ 65801 A / 65830A/ 65831A R-Series are high speed 3.3-Volt synchronous dynamic
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OCR Scan
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8MX64
PC/100
4Mx16
HYM7V65800A/
HYM7V65801
HYM7V65830A/
HYM7V6S831A
5830A/
5831A
CK3121
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