Untitled
Abstract: No abstract text available
Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400B
HY51V16400B
1A047-00-MAY95
HY51V16400BJ
HY51V16400BSL
HY51V16400BT
HY51V16400BSLT
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16100A
HY51V16100A
V16100Ato
1AD21-0O-MAY94
HY51V16100AJ
HY51V16100ASU
HY51V16100AT
HY51V161OOASLT
HY51V16100AR
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Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y M 5 6 4 1 2 4 A R -S e r ie s Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION Tîie HYM564124A is a 1M x 64-bit EDO mode C M O S DRAM module consisting of four HV5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and
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64-bit
HYM564124A
HV5118164B
HYM564124ARG/ATRG/ASLRG/ASLTRG
DQ0-DQ63)
1CE16-10-APR95
75Dflfl
16-10-APR98
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Untitled
Abstract: No abstract text available
Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge
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HY67V16100/101
64Kx16
486/Pentium
7ns/12ns/17ns
67MHz
486/Pentium
1DH06-11-MAY9S
HY67V16100/101
1DH06-11-MAY95
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