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    T1307 Search Results

    T1307 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LT1307BCMS8#TRPBF Analog Devices 1x Cell uP 600kHz PWM DC/DC Co Visit Analog Devices Buy
    LT1307IS8#PBF Analog Devices 1x Cell uP 600kHz PWM DC/DC Co Visit Analog Devices Buy
    LT1307BCS8#PBF Analog Devices 1x Cell uP 600kHz PWM DC/DC Co Visit Analog Devices Buy
    LT1307IS8#TRPBF Analog Devices 1x Cell uP 600kHz PWM DC/DC Co Visit Analog Devices Buy
    LT1307CS8#PBF Analog Devices 1x Cell uP 600kHz PWM DC/DC Co Visit Analog Devices Buy
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    T1307 Price and Stock

    Rochester Electronics LLC SFT1307-TL-E

    RF MOSFET 4V
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    DigiKey SFT1307-TL-E Bulk 18,200 290
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    Soberton Inc WST-1307S

    BUZZER MAGNETIC 5V 12.8X12.8 SMD
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    DigiKey WST-1307S Cut Tape 3,988 1
    • 1 $2.37
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    WST-1307S Digi-Reel 3,988 1
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    WST-1307S Reel 3,600 450
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    Master Electronics WST-1307S 1,250
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    Analog Devices Inc LT1307BCS8-PBF

    IC REG BOOST ADJ 600MA 8SO
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    DigiKey LT1307BCS8-PBF Tube 2,322 1
    • 1 $8.07
    • 10 $5.535
    • 100 $4.1459
    • 1000 $3.39362
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    Analog Devices Inc LT1307CS8-PBF

    IC REG BOOST ADJ 600MA 8SO
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    DigiKey LT1307CS8-PBF Tube 265 1
    • 1 $8.07
    • 10 $5.535
    • 100 $4.1459
    • 1000 $3.39362
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    Analog Devices Inc LT1307CMS8-PBF

    IC REG BOOST ADJ 600MA 8MSOP
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    DigiKey LT1307CMS8-PBF Tube 242 1
    • 1 $9.07
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    Find more T1307 price and stock on Findchips.com

    T1307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T1307

    Abstract: No abstract text available
    Text: T1307 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev - PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Miniature SMT Package SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Aging Input Voltage


    Original     		PDF T1307 10MHz) 15pF/10kohm 10msec T1307-C-3

    Untitled

    Abstract: No abstract text available
    Text: EURO QUARTZ T1307 Series TCXO 10.0MHz to 50.0MHz Ultra-low Acceleration Sensitivity Low Phase Noise performance Ultra-low Acceleration Sensitivity Frequency Range: 10 - 50 MHz Output Signal CMOS or Clipped Sinewave Miniature SMT Package DESCRIPTION OUTLINES AND DIMENSIONS


    Original     		PDF T1307 T1300 2x10-6ppm 15pF/10kÎ 1x10-6 1x10-7 7x10-11/g, 10MHz 100Hz

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.028 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single D TO-220AB G G D S S N-Channel MOSFET • • • • • • • Advanced Process Technology


    Original     		PDF IRFZ44R, SiHFZ44R O-220AB IRFZ44, SiHFZ44 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 100 RDS(on) () at VGS = 10 V 0.0105


    Original     		PDF SQM100N10-10 AEC-Q101 O-263 SQM100N10-10-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N06-06 AEC-Q101 O-220AB O-220 SQP120N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP85N10-10, SUB85N10-10 2002/95/EC O-220AB O-263 SUP85N10-10 SUP85N10-10-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQM60N06-15 AEC-Q101 2002/95/EC O-263 SQM60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0089 RDS(on) () at VGS = - 4.5 V 0.0132 ID (A) - 110 Configuration


    Original     		PDF SQM110P06-8m9L AEC-Q101 O-263 SQM110P06-8m9L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF740LC, SiHF740LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF830A, SiHF830A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQM200N04-1m8 AEC-Q101 O-263-7L SQM200N04-1m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N5electronic 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9520, SiHF9520 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM47N10-24L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.027 ID (A)


    Original     		PDF SQM47N10-24L AEC-Q101 2002/95/EC O-263 SQM47N10-24L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB17N50L, SiHFB17N50L 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM120N04-1m7L www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX. ID (A) d 0.0017 at VGS = 10 V 120 0.0020 at VGS = 4.5 V 120 Qg (TYP.) 190 TO-263 • TrenchFET power MOSFET • 100 % Rg and UIS tested


    Original     		PDF SUM120N04-1m7L O-263 SUM120N04-1m7L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12