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Vishay Siliconix SIHF840LCS-GE3 MOSFET N-CH 500V 8A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF840LCS-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.78257 10000 $0.6825	Buy Now
Vishay Intertechnologies SIHF840LCS-GE3 MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHF840LCS-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF840LCS-GE3	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.6825 10000 $0.6421	Buy Now
Mouser Electronics	SIHF840LCS-GE3					1 - 10 - 100 - 1000 $0.76 10000 $0.682	Get Quote
TTI	SIHF840LCS-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.745 10000 $0.683	Buy Now
EBV Elektronik	SIHF840LCS-GE3			13 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHF840STRL-GE3 SIHF840STRL-GE3 N-channel MOSFET Transistor, 8.1 A, 500 V, 3-Pin D2PAK \| Siliconix / Vishay SIHF840STRL-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIHF840STRL-GE3	Bulk			10	1 - 10 $1.66 100 $1.58 1000 $1.43 10000 $1.43	Get Quote
Vishay Intertechnologies IRF840PBF MOSFETs TO220 500V 8A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IRF840PBF	Tube	1,300		50	1 - 10 - 100 $0.83 1000 $0.83 10000 $0.83	Buy Now
Vishay Intertechnologies SIHF840AS-GE3 Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHF840AS-GE3				1	1 $1.13 10 $1.02 100 $0.81 1000 $0.75 10000 $0.75	Get Quote

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SIHF840 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF840LCS-GE3		Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK		Original	PDF

SIHF840 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF840S, SiHF840S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage	Original	IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: IRF840LC SiHF840LC Text: IRF840LC_RC, SiHF840LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF840LC SiHF840LC AN609, 18-Mar-10 AN609	PDF
IRF840LCPBF Abstract: IRF840LC SiHF840LC SiHF840LC-E3 Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating	Original	IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3	PDF
IRF840LC Abstract: SiHF840LC SiHF840LC-E3 Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	IRF840LC, SiHF840LC 11-Mar-11 IRF840LC SiHF840LC-E3	PDF
IRF840LCPBF Abstract: No abstract text available Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	IRF840LC, SiHF840LC 2002/95/EC 11-Mar-11 IRF840LCPBF	PDF
Untitled Abstract: No abstract text available Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage	Original	IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF840S, SiHF840S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRF840AS, SiHF840AS IRF840AL, SiHF840AL 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss	Original	IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF

Untitled Abstract: No abstract text available Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF840, SiHF840 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Application of irf840 Abstract: irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840 SiHF840-E3 Switching Application of irf840 Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF840, SiHF840 O-220 O-220 18-Jul-08 Application of irf840 irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840-E3 Switching Application of irf840	PDF
IRF840AL Abstract: IRF840AS SiHF840AL SiHF840AL-E3 SiHF840AS SiHF840AS-E3 IRF840 Text: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance	Original	IRF840AS, IRF840AL, SiHF840AS SiHF840AL O-263) O-262) 18-Jul-08 IRF840AL IRF840AS SiHF840AL-E3 SiHF840AS-E3 IRF840	PDF
IRF840S Abstract: SiHF840S SiHF840S-E3 Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel	Original	IRF840S, SiHF840S O-263) 18-Jul-08 IRF840S SiHF840S-E3	PDF
28544 Abstract: AN609 IRF840S SiHF840S Text: IRF840S_RC, SiHF840S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF840S SiHF840S AN609, 18-Mar-10 28544 AN609	PDF
AN609 Abstract: IRF840A SiHF840A IRF84 Text: IRF840A_RC, SiHF840A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF840A SiHF840A AN609, 18-Mar-10 AN609 IRF84	PDF
Untitled Abstract: No abstract text available Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating	Original	IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF840S, SiHF840S 2002/95/EC O-263) 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRF840AS, IRF840AL, SiHF840AS SiHF840AL O-262) O-263) 2002/95/EC 18-Jul-08	PDF

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Vishay Siliconix SIHF840LCS-GE3

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SIHF840 Datasheets (1)

SIHF840 Datasheets Context Search

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AN609

IRF840LCPBF

IRF840LC

IRF840LCPBF

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Application of irf840

IRF840AL

IRF840S

28544

AN609

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