Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHFBC30A Search Results

    SF Impression Pixel

    SIHFBC30A Price and Stock

    Vishay Siliconix SIHFBC30AS-GE3

    SIHFBC30AS-GE3 N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin D2PAK | Siliconix / Vishay SIHFBC30AS-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHFBC30AS-GE3 Bulk 10
    • 1 -
    • 10 $1.11
    • 100 $1.04
    • 1000 $0.94
    • 10000 $0.94
    		Get Quote

    Vishay Intertechnologies SIHFBC30AS-GE3

    Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFBC30AS-GE3 1
    • 1 $1.18
    • 10 $1.07
    • 100 $0.85
    • 1000 $0.79
    • 10000 $0.79
    		Get Quote

    Vishay Intertechnologies SIHFBC30ASTRR-GE3

    MOSFET N-CHANNEL 600V (Alt: SIHFBC30ASTRR-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHFBC30ASTRR-GE3 9 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SIHFBC30A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFBC30

    Abstract: IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AL-E3 SiHFBC30AS SiHFBC30AS-E3 IRFBC30ALPBF
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 18-Jul-08 IRFBC30 IRFBC30AL IRFBC30AS SiHFBC30AL-E3 SiHFBC30AS-E3 IRFBC30ALPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    4139 temperature

    Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139
    Text: IRFBC30AS_RC, SiHFBC30AS_RC, IRFBC30AL_RC, SiHFBC30AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRFBC30AS SiHFBC30AS IRFBC30AL SiHFBC30AL AN609, 20-Apr-10 4139 temperature 9571 AN609 74139 PDF

    IRFBC30A

    Abstract: SiHFBC30A SiHFBC30A-E3
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRFBC30A, SiHFBC30A O-220 18-Jul-08 IRFBC30A SiHFBC30A-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11 PDF

    IRFBC30AL

    Abstract: IRFBC30AS SiHFBC30AL SiHFBC30AS SiHFBC30AS-E3
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 11-Mar-11 IRFBC30AL IRFBC30AS SiHFBC30AS-E3 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: SiHFBC30A IRFBC30A SiHFBC30A-E3 mar 640 MOSFET TRANSISTOR
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11 MAR 740 MOSFET TRANSISTOR IRFBC30A SiHFBC30A-E3 mar 640 MOSFET TRANSISTOR PDF

    A1HB

    Abstract: IRFBC30 irfbc
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC A1HB IRFBC30 irfbc PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    SiHFBC30AL-GE3

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 18-Jul-08 SiHFBC30AL-GE3 PDF