high voltage gate drive transformer
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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Original
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IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
2011/65/EU
high voltage gate drive transformer
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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Original
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IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
IRFB13N50APbF
SiHFB13N5electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) (Ω) VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
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IRFB13N50A,
SiHFB13N50A
O-220
O-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
12-Mar-07
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PDF
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91-09509
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
|
Original
|
IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
2011/65/EU
91-09509
|
PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
|
Original
|
IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
|
Original
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IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
IRFB13N50APbF
SiHFB13N50Aemarks
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)
|
Original
|
IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)
|
Original
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IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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9698
Abstract: AN609 IRFB13N50A SiHFB13N50A
Text: IRFB13N50A_RC, SiHFB13N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFB13N50A
SiHFB13N50A
AN609,
16-Apr-10
9698
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)
|
Original
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IRFB13N50A,
SiHFB13N50A
2002/95/EC
O-220AB
IRFB13N50APbF
SiHFB13N50A-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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IRFB13N50A
Abstract: SiHFB13N50A SiHFB13N50A-E3
Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) (Ω) VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB13N50A,
SiHFB13N50A
O-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
18-Jul-08
IRFB13N50A
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PDF
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