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    high voltage gate drive transformer

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB O-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 2011/65/EU high voltage gate drive transformer

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N5electronic 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) (Ω) VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB13N50A, SiHFB13N50A O-220 O-220 IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 12-Mar-07

    91-09509

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB O-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 2011/65/EU 91-09509

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB O-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N50Aemarks 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N50A-E3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N50A-E3 2002/95/EC. 2002/95/EC 2011/65/EU.

    9698

    Abstract: AN609 IRFB13N50A SiHFB13N50A
    Text: IRFB13N50A_RC, SiHFB13N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFB13N50A SiHFB13N50A AN609, 16-Apr-10 9698 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC)


    Original     		PDF IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB IRFB13N50APbF SiHFB13N50A-E3 2002/95/EC. 2002/95/EC 2011/65/EU.

    IRFB13N50A

    Abstract: SiHFB13N50A SiHFB13N50A-E3
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) (Ω) VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB13N50A, SiHFB13N50A O-220 IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 18-Jul-08 IRFB13N50A