Untitled
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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IRF9520
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9520
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PDF
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SiHF9520S
Abstract: SiHF9520S-E3 IRF9520S
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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Original
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IRF9520S,
SiHF9520S
O-263)
2002/95/EC
11-Mar-11
SiHF9520S-E3
IRF9520S
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
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IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel
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Original
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IRF9520S,
SiHF9520S
2002/95/EC
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S
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Original
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IRF9520S,
SiHF9520S
SMD-220
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S
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Original
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IRF9520S,
SiHF9520S
SMD-220
18-Jul-08
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PDF
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IRF9520
Abstract: IRF9520 equivalent 10A 41ab IRF9520PBF SiHF9520
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
O-220
O-220
18-Jul-08
IRF9520
IRF9520 equivalent 10A
41ab
IRF9520PBF
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PDF
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AN609
Abstract: IRF9520S SiHF9520S
Text: IRF9520S_RC, SiHF9520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRF9520S
SiHF9520S
AN609,
18-Mar-10
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
11-Mar-11
|
PDF
|
irf9520
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf9520
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PDF
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IRF9520
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9520,
SiHF9520
O-220
O-220
12-Mar-07
IRF9520
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9520,
SiHF9520
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
|
AN609
Abstract: IRF9520 9028* mosfet
Text: IRF9520_RC, SiHF9520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRF9520
SiHF9520
AN609,
18-Mar-10
AN609
9028* mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel
|
Original
|
IRF9520S,
SiHF9520S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel
|
Original
|
IRF9520S,
SiHF9520S
2002/95/EC
O-263)
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
IRF9520S,
SiHF9520S
2002/95/EC
O-263)
18-Jul-08
|
PDF
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