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    SI8497DB Price and Stock

    Vishay Siliconix SI8497DB-T2-E1

    MOSFET P-CH 30V 13A 6MICROFOOT
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    DigiKey SI8497DB-T2-E1 Cut Tape 1
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    SI8497DB-T2-E1 Reel 3,000
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    SI8497DB-T2-E1 Digi-Reel 1
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    Vishay Intertechnologies SI8497DB-T2-E1

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8497DB-T2-E1)
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    Avnet Americas SI8497DB-T2-E1 Reel 19 Weeks 3,000
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    Mouser Electronics SI8497DB-T2-E1 5,107
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    Newark SI8497DB-T2-E1 Cut Tape 3,000
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    SI8497DB-T2-E1 Reel 3,000
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    Bristol Electronics SI8497DB-T2-E1 3,000
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    Quest Components SI8497DB-T2-E1 2,400
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    TTI SI8497DB-T2-E1 Reel 3,000
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    EBV Elektronik SI8497DB-T2-E1 17 Weeks 3,000
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    Vishay Intertechnologies SI8497DBT2E1

    P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SI8497DBT2E1 3,000
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    SI8497DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8497DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A MICROFOOT Original PDF

    SI8497DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable


    Original     		PDF Si8497DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable


    Original     		PDF Si8497DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si8497

    Abstract: No abstract text available
    Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable


    Original     		PDF Si8497DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8497

    Untitled

    Abstract: No abstract text available
    Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable


    Original     		PDF Si8497DB 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8497DB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    12697

    Abstract: 17932 611-11
    Text: Si8497DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8497DB AN609, 3907u 7041m 6127m 7225u 3113u 3748u 9593u 18-Jul-11 12697 17932 611-11

    Untitled

    Abstract: No abstract text available
    Text: Si8497DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) d 0.053 at VGS = -4.5 V -13 0.071 at VGS = -2.5 V -11 0.120 at VGS = -2 V -5 MICRO FOOT 1.5 x 1 D 4 x xxx xx x 1 m m S 3 mm


    Original     		PDF Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402