RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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PDF
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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PDF
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RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101
T112
07MVS1
3080D
RD07MVS
Rd07mvs1101
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PDF
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RD07MVS1
Abstract: skam 199j 329J
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:
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AN-UHF-018-C
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
skam
199j
329J
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PDF
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101,
RD07MVS1-101
T112
ID-750
RD07M
D07MVS1
3M Touch Systems
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PDF
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RD07MVS1
Abstract: ic 453 8p
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
ic 453 8p
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PDF
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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AN-900-006
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
17mml
MITSUBISHI APPLICATION NOTE RF POWER
gp 735
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PDF
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RD07MVS1
Abstract: micro strip line
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-018-B
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
micro strip line
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taiyosya
Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.
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AN-UHF-085-A
RD01MUS2
RD07MVS1B
RD01MUS2:
RD07MVS1B:
068YD"
400-470MHz
RPC03
taiyosya
grm188r11h
RD01MUS2
GRM1882
GRM2162C1H
GRM1882C1H
GRM2162C
GRM2162C1H470GD01E
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RD01MUS1
Abstract: RD07MVS1B
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.
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AN-900-028-A
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
RD01MUS1
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RD07MVS1
Abstract: RD01MUS1
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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AN-900-008
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES
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RD07MVS1
175MHz
520MHz
520MHz
520MHz)
175MHz)
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MAR 527 transistor
Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
MAR 527 transistor
RD07MVS1B-101
transistor MAR 439
RD07MVS1B
RD07MVS1
T112
mar 640 MOSFET TRANSISTOR
mar 649 MOSFET TRANSISTOR
T06 transistor
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PDF
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rd07mvs1b101
Abstract: 3M Touch Systems D07MVS1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
rd07mvs1b101
3M Touch Systems
D07MVS1
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4538 equivalent
Abstract: adj 2576 RD07MVS1 ire 530 AN-UHF-027-C
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-C Date : 16th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 RF characteristics data
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AN-UHF-027-C
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
450-520MHz)
4538 equivalent
adj 2576
ire 530
AN-UHF-027-C
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RD01MUS1
Abstract: RD07MVS1 848/b+5891
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency
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AN-VHF-013Date
RD01MUS1
RD07MVS1
RD01MUS1:
2K291"
RD07MVS1:
031AA"
135-175MHz
RD01MUS1
848/b+5891
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RD01MUS1
Abstract: D 1556 RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.
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AN-900-008-A
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
D 1556
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amp 827 578
Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics
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AN-VHF-013-A
RD01MUS1
RD07MVS1
RD07MVS1
RD01MUS1:
2K291"
RD07MVS1:
031AA"
135-175MHz
amp 827 578
2K291
RD01MUS1
amp 827 578 3 pin
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PDF
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RD01MUS1
Abstract: RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.
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AN-900-006-A
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
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PDF
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GP4060
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
Oct2011
GP4060
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PDF
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diode gp 429
Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data
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Original
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AN-900-028
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
diode gp 429
RD01MUS1
RD07M
RD07MVS
AN-900-028
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PDF
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AN-UHF-027-B
Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency
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Original
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AN-UHF-027-B
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
AN-UHF-027-B
450-520MHz)
adj 2576
6926 b 946
MITSUBISHI APPLICATION NOTE RF POWER
mitsubishi 5247
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PDF
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RD02MUS1
Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for
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AN-GEN-034-C
RD07MVS1
RD02MUS1
RD02MUS1.
AN-GEN-034
507mm.
RD02MUS1
mitsubishi bipolar rf power
pcb warpage after reflow
MITSUBISHI APPLICATION NOTE RF POWER
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PDF
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RD07MVS1B
Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
RD07MVS1B
transistor t06 19
RD07MVS1B-101
RD07MVS1
T112
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PDF
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