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    MSM5117160 Search Results

    MSM5117160 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM5117160-70JS OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-70JS OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-70TK OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-70TL OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-70TS-K OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-70TS-L OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80JS OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80JS OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80TK OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80TL OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80TS-K OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117160-80TS-L OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF

    MSM5117160 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117160 is a new generation D ynam ic R A M organized as 1,048,576-word x 16bit configuration. The technology used to fabricate the MSM5117160 is O K I's C M O S silico n gate process technology.


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    PDF MSM5117160_ 576-Word 16-Bit MSM5117160 16bit cycles/32ms

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117160 achieves high integration, high-speed operation, and low-power


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    PDF MSM5117160 576-Word 16-Bit MSM5117160 42-pin 50/44-pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117160 achieves high integration, high-speed operation, and low-power


    OCR Scan
    PDF MSM5117160 576-Word 16-Bit MSM5117160 42-pin 50/44-pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117160 is a new generation Dynamic RAM organized as 1,048,576-word x 16bit configuration. The technology used to fabricate the MSM5117160 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117160_ 576-Word 16-Bit MSM5117160 16bit cycles/32ms

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


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    PDF MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750

    20 TI 54240

    Abstract: MSM51VI6180
    Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 20 TI 54240

    Untitled

    Abstract: No abstract text available
    Text: O K I Sem iconductor MSM5 1 17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T h e M SM 51 17160 is a 1,048,576-word x 16-bit d yn am ic R A M fab ricated in O K I's C M O S silico n gate technolog y. T h e M SM 5117160 ach ieves h ig h in teg ratio n , high-speed o p eratio n, an d low -pow er


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    PDF MSM5117160 576-Word 16-Bit MSM5117160 42-pin 50/44-pin

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


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    PDF MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN MSM5116900-70 MSM5116900-80 B724e

    m51171

    Abstract: m32AG M5116
    Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5116180 576-Word 18-Bit MSM5116180 cycles/64ms m51171 m32AG M5116

    42-PIN

    Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
    Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan
    PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 42-PIN MSM51V16180-70 MSM51V16180-80 V16180