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    MEL82 Search Results

    MEL82 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MEL82 Micro Electronics NPN SILICON TRANSISTOR Scan PDF
    MEL82 Micro Electronics Semiconductor Device Data Book Scan PDF

    MEL82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MEL82

    Abstract: MI38T
    Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination


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    PDF MEL82 MI38T 20mW/cm3 100ohm

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Text: MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MEL82 MIB38T-K

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Text: ORO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type Ieadframe, MI38T & MJB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MJB38T MEL82 100mA MIB38T-K

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Text: CRO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MEB38T MEL82 100mA MIB38T-K

    MAL100

    Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
    Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    PDF CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MAL100 MEL12 MEL31 MEL32 transistor case To 106

    MEL12

    Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
    Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    PDF CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MEL12 MAL100 transistor case To 106 mel32 photo transistor MEL11 MEL11A

    Untitled

    Abstract: No abstract text available
    Text: MIB38T-K MI38T-K MI 3 8 T & MIB38T are GaAlAs infrared emitting d i o d e m olded in a flangless 3mra 0 clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, it has an narrow radiation angle m e a s u r e d from the optical axis to the half


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    PDF MIB38T MI38T MEL82 MI38T-K MIB38T-K 100mA

    MEL12

    Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
    Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A


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    PDF CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    Untitled

    Abstract: No abstract text available
    Text: IUI I • I U ■ I D ■ I DARLINGTON TRANSISTOR I DESCRIPTION S>2.97<0.117> MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / N \ 4. <0.16 T


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    PDF MDL82 MEL82) 100ohm MDL82

    MEL82

    Abstract: MI38T
    Text: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to ­ transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,


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    PDF MEL82 MI38T 20mW/cm2

    L303A

    Abstract: DL78 L 31A MA1515 EL79D
    Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a


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    PDF ML303 ML303B ML308 ML308A L-303a -308C MEL78 MEL78D MEL79 EL79D L303A DL78 L 31A MA1515