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    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


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    ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    marking SH SOT23 mosfet

    Abstract: transistor mps 2904 mdc1005 SCR T 00-350 MPS 1005
    Text: Order this data sheet by M DC1005A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC1005A MDC1005BLT1 SMALLBLOCK Products MOSFET Turn-Off Device W ith Integral G ate Clamp M o to ro la p re fe rre d devices The MDC1005 series is a silicon turn-off device designed to reduce the turn-off time of a


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    DC1005A/D MDC1005 J1046F MDC1005A MDC1005BLT1 marking SH SOT23 mosfet transistor mps 2904 SCR T 00-350 MPS 1005 PDF

    marking 2904

    Abstract: MDC1000B MDC1000 318E-04
    Text: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers


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    O-226AA) O-236AB) OT-23 318E-04 O-261 OT-223 O-226AA DC1000A MDC1005A MDC1000 marking 2904 MDC1000B 318E-04 PDF

    MDC1000

    Abstract: MDC-1000
    Text: Field-Effect Transistors The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first con­ sideration for new equipment design. CAUTION: Static electricity is a surface phenomenon which most com ­


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    MDC1000 MDC1005 OT-23 MDC-1000 PDF