pn4122
Abstract: PN3569 2N4402 2N4403 PN4250 MMBT4402
Text: bflE D • LS01130 003^520 Tb7 « N S C S General Purpose Amplifiers and Switches continued Devices (Volts) Min 40 ‘ NPN h fE@ lc k V CE0(smt) • ' PN P - - (mA) Max Min M ax NATL SENICON]) (DISCRETE ) fT @ lc mA (M Hz) Min mA MF (dB) Max P D (Amb) Package
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LS01130
PN3567
PN3569
TIS97
TN2219A
T0-92
O-237
O-236*
pn4122
2N4402 2N4403
PN4250
MMBT4402
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NZT6714
Abstract: TN6714A
Text: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
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NZT6714
OT-223
bS0113D
O-226
b501130
NZT6714
TN6714A
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NZT6729
Abstract: TN6729A
Text: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
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TN6729A
NZT6729
O-226
OT-223
004G745
b5D1130
DM0743
NZT6729
TN6729A
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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NPS8852H
b5D113Q
DIODE 3L2
Complementary MOSFET Half Bridge
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supersot-3
Abstract: 2T3 transistor NDS335N FR 014 S0113D
Text: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS335N
OT-23
OT-23)
NDS33SN
supersot-3
2T3 transistor
NDS335N
FR 014
S0113D
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L50Q
Abstract: BCW65C
Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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BCW65C
LS01130
004D673
L50Q
BCW65C
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2n3904 spice model
Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113
Text: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.
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2N3904
MMBT3904
MMPQ3904
PZT3904
2N3904
MMBT3904
OT-23
MMPQ3904
SOIC-16
2n3904 spice model
2N3904 equivalent
2n3904 spice
model of 2n3904
2N39041
2N3904 b10
50113G
L50113
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FLC 100
Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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2N3906
MMPQ3906
MMBT3906
PZT3906
SOIC-16
OT-223
rO-92
b5D113D
0QMQb71
FLC 100
728p
cny 76
200U
2N3906
MMBT3906
MMPQ3906
PZT3906
SOIC-16
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transistor t04 76
Abstract: GV 475 diode transistor T04 NDB6060 004027S
Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP6060/NDB6060
025ft
b50113G
0DMQ27H
bS01130
004027S
transistor t04 76
GV 475 diode
transistor T04
NDB6060
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BSS63
Abstract: No abstract text available
Text: BSS63 Discrete POW ER & Signal Technologies A National Semiconductor" BSS63 Mark: T3 PNP General Pupose Amplifier This device is designed for general purpose am plifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS*
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BSS63
L501130
BSS63
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Untitled
Abstract: No abstract text available
Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)
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IRF232
IRF233
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
2N6759
2N6760
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diode e 1205
Abstract: mmbd1201
Text: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage
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MMBD1201
OT-23
L5G113D
diode e 1205
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NDS9936
Abstract: Vi46 ab-1 national
Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9936
LS01130
125-C
bS01130
NDS9936
Vi46
ab-1 national
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PN4860
Abstract: PN4857 2N5639 J106 PN4858 2N5555 2N5638 2N5640 J105 J107
Text: N o. P kg . Signal T T r^ t ? ? ? ? 00 ^ in t" io ^ io CM CM CM CM O O) o CM CM CN CM O O O O CM CM CM CM 0) 0 ) 0 0) CM CM CN CN 0)0 in in in in in in in in in o ^ <5 q o to in co 2 2 in ^ o m 2 2 2 s £ ! °9 <9 _ O _ O _ O CN *- o o o in s in « in 50
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2N5555
2N5638
2N5639
2N5640
PN4858
PN4859
PN4860
PN4861
PN4857
J106
J105
J107
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mpsa42 "sot23"
Abstract: MMBTA42 MARK MPSA42 NATIONAL NATIONAL MPSA42 BD004 National semi spice model MPSA42 sot
Text: MPSA42 / MMBTA42 / PZTA42 e? Discrete POWER & Signal Technologies National Semi conductor' PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced
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MPSA42
MMBTA42
PZTA42
MPSA42
MMBTA42
OT-23
OT-223
mpsa42 "sot23"
MMBTA42 MARK
MPSA42 NATIONAL
NATIONAL MPSA42
BD004
National semi spice model
MPSA42 sot
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common collector amplifier circuit designing
Abstract: bd113 npn 4111 25CC TN3019A
Text: Semiconductor"1 TN3019A D iscrete P O W ER & S ig n a l Technologies ALM National TN3019A c TO-226 Bc NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12.
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TN3019A
LS01130
00MQL37
D113a
00M0b3Ã
common collector amplifier circuit designing
bd113
npn 4111
25CC
TN3019A
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NDT452AP
Abstract: No abstract text available
Text: June 1996 National Semiconductor" NDT452AP P-Channel Enhancement Mode Field Effect Transistor Features General Description • -5A, -30V. RDS 0N1 = 0 .0 650 @ VGS = -10V RDS(0N1 = 0.1 n @ V GS = -4.5 V. These P-Channel enhancement mode power field effect transistors are produced using National's
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NDT452AP
065C1
OT-223
QGHQ10M
NDT452AP
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2N5087 equivalent
Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087
Text: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 Discrete POWER & Sign al Technologies National f i Semiconductor" MMBT5086 MMBT5087 2N5086 2N5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose am plifier applications at collector currents to 50 mA.
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2N5086
MMBT5086
2N5087
MMBT5087
2N5087
OT-23
LS01130
2N5087 equivalent
MMBT5087
2N5087 NATIONAL SEMICONDUCTOR
2NS087
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